2010 Fiscal Year Final Research Report
Formation of Ohmic hole injection in organic semiconductor films
| Project/Area Number |
21760005
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| Research Category |
Grant-in-Aid for Young Scientists (B)
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| Allocation Type | Single-year Grants |
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| Research Field |
Applied materials science/Crystal engineering
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| Research Institution | Japan Advanced Institute of Science and Technology |
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Principal Investigator |
MATSUSHIMA Toshinori Japan Advanced Institute of Science and Technology, マテリアルサイエンス研究科, 助教 (40521985)
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| Project Period (FY) |
2009 – 2010
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| Keywords | 半導体 / 有機分子 / 新機能材料 / 有機・分子エレクトロニクス |
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| Research Abstract |
Current density-voltage characteristics of organic hole-only devices were evaluated when thickness of molybdenum trioxide between an ITO anode and an organic layer was changed. We found that use of optimized molybdenum trioxide thickness induces formation of Ohmic hole injection resulting from reduced hole injection barrier. Hole mobilities of a variety of organic layers were able to be estimated by analyzing the current density-voltage characteristics with a space-charge-limited current theory.
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