2010 Fiscal Year Final Research Report
Fabrication of red light-emitting devices using the rare-earth doped nitride semiconductors and the elucidation of luminescence mechanism
| Project/Area Number |
21760007
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| Research Category |
Grant-in-Aid for Young Scientists (B)
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| Allocation Type | Single-year Grants |
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| Research Field |
Applied materials science/Crystal engineering
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| Research Institution | Osaka University |
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Principal Investigator |
NISHIKAWA Atsushi Osaka University, 工学研究科, 助教 (60417095)
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| Project Period (FY) |
2009 – 2010
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| Keywords | 窒化物半導体 / ユウロピウム / 赤色発光ダイオード / OMVPE法 |
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| Research Abstract |
We have succeeded in the growth of Eu-doped GaN layer grown by organometallic vapor phase epitaxy and demonstrated the first operation of current-injected red emission from a Eu-doped GaN LED. We have found strong influence of growth temperature and pressure on Eu luminescence intensity. As a result, improved light output power of 17 μW was achieved.
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