2010 Fiscal Year Final Research Report
Precise strain evaluation for high-performance bipolar transistor
| Project/Area Number |
21760011
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| Research Category |
Grant-in-Aid for Young Scientists (B)
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| Allocation Type | Single-year Grants |
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| Research Field |
Applied materials science/Crystal engineering
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| Research Institution | Kyushu University |
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Principal Investigator |
WANG Dong Kyushu University, 産学連携センター, 特任准教授 (10419616)
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| Project Period (FY) |
2009 – 2010
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| Keywords | 解析・評価 / 半導体物性 / 電子・電気材料 / 先端機能デバイス |
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| Research Abstract |
The geometry of test sample for local strain evaluation was as small as 5×5μm^2. We established photoluminescence measurement system for such a sample. We fabricated freestanding Si membranes structure (Si-On-Nothing structure), followed by deposition of SiN film. We evaluated strains in these samples using the PL system. As results, a compressive strain of approximately 1% was induced in the 200-nm-thick Si film by 200-nm-thick SiN film ; the strain along <100> direction was much larger than that along <110> direction. Also, we proposed a method for judging uniform or ununiform strain from dependence of PL signal peak position and its intensity on Si film thickness.
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