• Search Research Projects
  • Search Researchers
  • How to Use
  1. Back to project page

2010 Fiscal Year Final Research Report

Development of a single molecule sensing device with nanogap electrodes formed of few-layer graphene

Research Project

  • PDF
Project/Area Number 21760014
Research Category

Grant-in-Aid for Young Scientists (B)

Allocation TypeSingle-year Grants
Research Field Applied materials science/Crystal engineering
Research InstitutionNational Institute for Materials Science

Principal Investigator

WATANABE Eiichiro  National Institute for Materials Science, ナノテクノロジー融合センター, NIMSポスドク研究員 (10469786)

Project Period (FY) 2009 – 2010
Keywordsグラフェン / ナノギャップ
Research Abstract

We fabricated graphene-based nanogap electrodes and investigated a contact resistance between graphene and metallic electrodes for the realization of a single molecule sensing device. As a result, we established the nanogap-fabrication process in few-layer graphene by utilizing an electrical breakdown method. In addition, we investigated the contact resistance by utilizing a transmission line method. The results indicated that the fabrication process and procedure were very important for developing the low resistance ohmic contact to the graphene. These findings are expected to contribute to progress in the development of graphene-based nanoelectronic devices.

  • Research Products

    (17 results)

All 2011 2010 2009

All Journal Article (6 results) (of which Peer Reviewed: 6 results) Presentation (10 results) Patent(Industrial Property Rights) (1 results)

  • [Journal Article] Production of Extended Single-Layer Graphene2011

    • Author(s)
      M.Xu, D.Fujita, K.Sagisaka, E.Watanabe, N.Hanagata
    • Journal Title

      ACS Nano 5

      Pages: 1522-1528

    • Peer Reviewed
  • [Journal Article] Demonstration of diamond field effect transistors by AlN/diamond heterostructure2011

    • Author(s)
      M.Imura, R.Hayakawa, E.Watanabe, M.Liao, Y.Koide, H.Amano
    • Journal Title

      Physica Status Solidi (RRL).Rapid Research Letters 5

      Pages: 125-127

    • Peer Reviewed
  • [Journal Article] π junction transition in InAs self-assembled quantum dot coupled with SQUID2011

    • Author(s)
      S.Kim, R.Ishiguro, M.Kamio, Y.Doda, E.Watanabe, D.Tsuya, K.Shibata, K.Hirakawa, H.Takayanagi
    • Journal Title

      Applied Physics Letters 98

      Pages: 063106

    • Peer Reviewed
  • [Journal Article] Fabrication of quantum-dot devices in graphene2010

    • Author(s)
      S.Moriyama, Y.Morita, E.Watanabe, D.Tsuya, S.Uji, M.Shimizu, K.Ishibashi
    • Journal Title

      Science and Technology of Advanced Materials 11

      Pages: 054601

    • Peer Reviewed
  • [Journal Article] Suspended Single-Crystal Diamond Nanowires for High-Performance Nanoelectromechanical Switches2010

    • Author(s)
      M.Liao, S.Hishita, E.Watanabe, S.Koizumi, Y.Koide
    • Journal Title

      Advanced Materials 22

      Pages: 5393-5397

    • Peer Reviewed
  • [Journal Article] Coupled quantum dots in a graphene-based two-dimensional semimetal2009

    • Author(s)
      S.Moriyama, D.Tsuya, E.Watanabe, S.Uji, M.Shimizu, T.Mori, T.Yamaguchi, K.Ishibashi
    • Journal Title

      Nano Letters 9

      Pages: 2891-2896

    • Peer Reviewed
  • [Presentation] Quantum dots and nanostructures in graphene2011

    • Author(s)
      S.Moriyama, D.Tsuya, E.Watanabe, S.Uji, M.Shimizu, K.Ishibashi
    • Organizer
      International Symposium on Nanoscale Transport and Technology 2011
    • Place of Presentation
      Kanagawa, Japan
    • Year and Date
      20110111-20110114
  • [Presentation] Contact Resistance in Graphene-Based Devices by Transmission Line Method2011

    • Author(s)
      E.Watanabe, D.Tsuya, Y.Koide
    • Organizer
      Frontiers in Nanoscale Science and Technology Workshop 2011
    • Place of Presentation
      RIKEN, Japan
    • Year and Date
      20110105-20110107
  • [Presentation] 伝送線路(TLM)法による多端子グラフェンデバイスのコンタクト抵抗評価2010

    • Author(s)
      渡辺英一郎, 津谷大樹, Arolyn Conwill, 小出康夫
    • Organizer
      第24回ダイヤモンドシンポジウム
    • Place of Presentation
      東京
    • Year and Date
      20101117-20101119
  • [Presentation] 種々酸化膜/シリコン基板上に作製したグラフェンの電気伝導特性2010

    • Author(s)
      渡辺英一郎, 津谷大樹, 小出康夫
    • Organizer
      第24回ダイヤモンドシンポジウム
    • Place of Presentation
      東京
    • Year and Date
      20101117-20101119
  • [Presentation] グラフェンナノ構造の単一電子輸送特性2010

    • Author(s)
      森山悟士, 津谷大樹, 渡辺英一郎, 宇治進也
    • Organizer
      日本物理学会2010年第65回年次大会
    • Place of Presentation
      岡山
    • Year and Date
      20100320-20100323
  • [Presentation] Large-Scale, Uniform and Transferrable Graphene Films synthesized by Chemical Vapor Deposition2009

    • Author(s)
      M.Xu, D.Fujita, J.Gao, E.Watanabe, N.Hanagata
    • Organizer
      22nd International Microprocesses and Nanotechnology Conference
    • Place of Presentation
      Sapporo, Japan
    • Year and Date
      20091116-20091119
  • [Presentation] グラフェン結合量子ドットにおけるクーロンブロッケイド効果の観測2009

    • Author(s)
      森山悟士, 津谷大樹, 渡辺英一郎, 宇治進也, 清水麻希, 森貴洋, 山口智弘, 石橋幸治
    • Organizer
      日本物理学会2009年秋季大会
    • Place of Presentation
      熊本
    • Year and Date
      20090925-20090928
  • [Presentation] グラフェン2重結合量子ドット作製と単一電子輸送特性の観測2009

    • Author(s)
      森山悟士, 津谷大樹, 渡辺英一郎, 宇治進也, 清水麻希, 森貴洋, 山口智弘, 石橋幸治
    • Organizer
      2009年秋季第70回応用物理学会学術講演会
    • Place of Presentation
      富山
    • Year and Date
      20090908-20090911
  • [Presentation] Double quantum-dot devices in triple-layer graphene2009

    • Author(s)
      S.Moriyama, D.Tsuya, E.Watanabe, S.Uji, M.Shimizu, T.Mori, T.Yamaguchi, K.Ishibashi
    • Organizer
      MSS-14, The 14th International Conference on Modulated Semiconductor structures
    • Place of Presentation
      Hyogo, Japan
    • Year and Date
      20090719-20090724
  • [Presentation] A graphene-based double quantum dot device2009

    • Author(s)
      S.Moriyama, D.Tsuya, E.Watanabe, S.Uji, M.Shimizu, T.Mori, T.Yamaguchi, K.Ishibashi
    • Organizer
      FNST2009, Frontiers in Nanoscale Science and Technology Workshop
    • Place of Presentation
      Boston, USA
    • Year and Date
      20090529-20090531
  • [Patent(Industrial Property Rights)] グラフェントランジスタ2009

    • Inventor(s)
      渡辺英一郎/津谷大樹/小出康夫
    • Industrial Property Rights Holder
      渡辺英一郎/津谷大樹/小出康夫
    • Industrial Property Number
      特許,特願 2009-271742
    • Filing Date
      2009-11-30

URL: 

Published: 2012-02-13   Modified: 2016-04-21  

Information User Guide FAQ News Terms of Use Attribution of KAKENHI

Powered by NII kakenhi