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2010 Fiscal Year Final Research Report

Fabrication of high efficiency solar cell materials using low dimensional Si nanostructures

Research Project

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Project/Area Number 21760015
Research Category

Grant-in-Aid for Young Scientists (B)

Allocation TypeSingle-year Grants
Research Field Applied materials science/Crystal engineering
Research InstitutionNational Institute for Materials Science

Principal Investigator

FUKATA Naoki  National Institute for Materials Science, 国際ナノアーキテクトニクス研究拠点, 独立研究者 (90302207)

Project Period (FY) 2009 – 2010
Keywords太陽電池 / 量子細線 / 量子ドット / ナノ材料
Research Abstract

I investigated the development of the next-generation solar cells using functionalized Si nanostructures such as zero-dimensional Si nanocrystals (diameter : 1-50nm, bandgap : 1.1-3.0 eV) and one-dimensional SiNWs (diameter : 5-50nm, bandgap : 1.1-1.5 eV) to realize both low-cost and high efficiency.

  • Research Products

    (22 results)

All 2010 2009 Other

All Journal Article (7 results) (of which Peer Reviewed: 7 results) Presentation (12 results) Remarks (1 results) Patent(Industrial Property Rights) (2 results)

  • [Journal Article] Doping and segregation of impurity atoms in silicon nanowires2010

    • Author(s)
      N.Fukata, K.Sato, M.Mitome, Y.Bando, T.Sekiguchi, M.Kirkham, J-I.Hong, Z.L.Wang, R.L.Snyder
    • Journal Title

      ACS NANO 4

      Pages: 3807-3816

    • Peer Reviewed
  • [Journal Article] Impurity doping in silicon nanowires2009

    • Author(s)
      N.Fukata
    • Journal Title

      Adv.Mater. 21(27)

      Pages: 2829-2832

    • Peer Reviewed
  • [Journal Article] Doping and characterization of boron atoms in nanocrystalline silicon particles2009

    • Author(s)
      K.Sato, N.Fukata, K.Hirakuri
    • Journal Title

      Appl.Phys.Lett. 94(16)

      Pages: 161902(3)

    • Peer Reviewed
  • [Journal Article] Phosphorus ions implantation in silicon nanocrystals embedded in SiO_22009

    • Author(s)
      K.Murakami, R.Shirakawa, M.Tsujimura, N.Uchida, N.Fukata, S.Hishita
    • Journal Title

      J.Appl.Phys. 105(5)

      Pages: 054307(5)

    • Peer Reviewed
  • [Journal Article] Electronic States of P Donors in Si Nanocrystals Embedded in Amorphous SiO2 Layer Studied by Electron Spin Resonance : Hydrogen Passivation Effects2009

    • Author(s)
      K.Murakami, M.Tsujimura, R.Shirakawa, N.Uchida, N.Fukata
    • Journal Title

      Jpn.J.Appl. 48

      Pages: 081201(6)

    • Peer Reviewed
  • [Journal Article] The synthesis and structural characterization of boron-doped silicon-nanocrystals with enhanced electroconductivity2009

    • Author(s)
      K.Sato, K.Niino, N.Fukata, K.Hirakuri, Y.Yamauchi
    • Journal Title

      Nanotechnology 20(36)

      Pages: 365207-1-"365207-6"

    • Peer Reviewed
  • [Journal Article] Doping and segregation of impurity atoms in silicon nanowires2009

    • Author(s)
      N.Fukata, M.Seoka, N.Saito, K.Sato, J.Chen, T.Sekiguchi, K.Murakami
    • Journal Title

      Physica B. 404

      Pages: 5200

    • Peer Reviewed
  • [Presentation] Doping and characterization of impurity atoms in Si nanowires2010

    • Author(s)
      N.Fukata, K.Sato, M.Mitome, Y.Bando, T.Sekiguchi
    • Place of Presentation
      Rome (Italy)
    • Year and Date
      2010-12-05
  • [Presentation] Doping and characterization of impurity atoms in germanium nanowires2010

    • Author(s)
      N.Fukata, N.Saito, S.Ishida, S.Yokono, K.Sato, J.Chen, T.Sekiguchi, K.Murakami
    • Organizer
      2010 MRS FALL Meeting
    • Place of Presentation
      Boston (USA)
    • Year and Date
      2010-12-02
  • [Presentation] イオン注入によるSiナノワイヤへの不純物ドーピング2010

    • Author(s)
      深田直樹, 齋藤直之, 石田慎哉, 横野茂輝, 陣君, 関口隆史, 菱田俊一, 村上浩一
    • Organizer
      春季第57回応用物理学関係連合講演会
    • Place of Presentation
      東海大学
    • Year and Date
      2010-03-20
  • [Presentation] SiナノワイヤへのPイオン注入2010

    • Author(s)
      石田慎哉, 齋藤直之, 横野茂輝, 深田直樹, 陣君, 関口隆史, 菱田俊一, 村上浩一
    • Organizer
      春季第57回応用物理学関係連合講演会
    • Place of Presentation
      東海大学
    • Year and Date
      2010-03-19
  • [Presentation] SiナノワイヤへのO_2^+イオン注入効果2010

    • Author(s)
      横野茂輝, 齋藤直之, 石田慎哉, 深田直樹, 陣君, 関口隆史, 菱田俊一, 村上浩一
    • Organizer
      春季第57回応用物理学関係連合講演会
    • Place of Presentation
      東海大学
    • Year and Date
      2010-03-19
  • [Presentation] Impurity doping in silicon nanowires during synthesis and by ion implantation2009

    • Author(s)
      N.Fukata, N.Saito, S.Ishida, S.Yokono, K.Sato, J.Chen, T.Sekiguchi, K.Murakami
    • Organizer
      2009 MRS FALL Meeting
    • Place of Presentation
      Boston (USA)
    • Year and Date
      2009-12-02
  • [Presentation] イオン注入によるSiナノワイヤへの不純物ドーピングと電気的活性化2009

    • Author(s)
      深田直樹, 齋藤直之, 石田慎哉, 横野茂輝, 陣君, 関口隆史, 菱田俊一, 村上浩一
    • Organizer
      秋季第70回応用物理学会学術講演会
    • Place of Presentation
      富山大学
    • Year and Date
      2009-09-10
  • [Presentation] PドープSiナノ結晶の光誘起ESR2009

    • Author(s)
      長橋綾子, 澤田智孝, アチャルジガヤトリ, 内田紀行, 深田直樹, 村上浩一
    • Organizer
      秋季第70回応用物理学会学術講演会
    • Place of Presentation
      富山大学
    • Year and Date
      2009-09-09
  • [Presentation] イオン注入後のSi ナノワイヤの結晶性回復とP の電気的活性化2009

    • Author(s)
      石田慎哉, 齋藤直之, 横野茂輝, 深田直樹, 陣君, 関口隆史, 菱田俊一, 村上浩一
    • Organizer
      秋季第70回応用物理学会学術講演会
    • Place of Presentation
      富山大学
    • Year and Date
      2009-09-09
  • [Presentation] ボトムアップ手法によるシリコンナノワイヤの創製および不純物ドーピング2009

    • Author(s)
      深田直樹, 齋藤直之, 陣君, 関口隆史, 村上浩一
    • Organizer
      秋季第70回応用物理学会学術講演会
    • Place of Presentation
      富山大学
    • Year and Date
      2009-09-09
  • [Presentation] 短時間アニールを利用したBイオン注入Siナノワイヤの結晶性回復とBの電気的活性化2009

    • Author(s)
      齋藤直之, 石田慎哉, 横野茂輝, 深田直樹, 陣君, 関口隆史, 菱田俊一, 村上浩一
    • Organizer
      秋季第70回応用物理学会学術講演会
    • Place of Presentation
      富山大学
    • Year and Date
      2009-09-09
  • [Presentation] Doping and segregation of impurity atoms in silicon nanowires2009

    • Author(s)
      N.Fukata, M.Seoka, N.Saito, J.Chen, T.Sekiguchi, K.Murakami
    • Organizer
      The 25th International Conference on Defects in Semiconductors
    • Place of Presentation
      St.Petersburg (Russia)
    • Year and Date
      2009-07-21
  • [Remarks] ホームページ等

    • URL

      http://www.nims.go.jp/mana/people/independent_scientist/n_fukata/index.html

  • [Patent(Industrial Property Rights)] シリコンナノ粒子/シリコンナノワイヤ複合材料、太陽電池、発光デバイス、及び製造法2010

    • Inventor(s)
      深田直樹、佐藤慶介
    • Industrial Property Rights Holder
      独立行政法人物質・材料研究機構
    • Industrial Property Number
      特許,2010-113778
    • Filing Date
      2010-05-18
  • [Patent(Industrial Property Rights)] ドライプロセス装置2009

    • Inventor(s)
      佐藤慶介、深田直樹
    • Industrial Property Rights Holder
      独立行政法人物質・材料研究機構
    • Industrial Property Number
      特許,2009-007329
    • Filing Date
      2009-01-16

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Published: 2012-02-13   Modified: 2016-04-21  

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