2011 Fiscal Year Final Research Report
Plasma assisted atomic layer deposition with metastable atom exposure
| Project/Area Number |
21760033
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| Research Category |
Grant-in-Aid for Young Scientists (B)
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| Allocation Type | Single-year Grants |
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| Research Field |
Thin film/Surface and interfacial physical properties
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| Research Institution | 防衛大学校 |
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Principal Investigator |
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| Project Period (FY) |
2009 – 2011
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| Keywords | 表面・界面物性 / プラズマ加工 / 電子・電気材料 |
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| Research Abstract |
Atomic layer deposition(ALD) is the powerful processing method for the formation of nano thin films with finite thickness control. Low pressure plasma is applied for ALD process to enhance the surface reaction for the reduction of the film impurities. In the paper, HfO2 film deposition from Tetrakis EthylMethyl Amino Hafnium(TEMAH) and Ar diluted O2 plasma is shown as an example. The films are analyzed by X-ray Photoelectron Spectroscopy(XPS), Atomic Force Microscopy(AFM).
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