2010 Fiscal Year Final Research Report
Development of a novel planarization method for gallium nitride surface using photo-electrochemical treatment.
| Project/Area Number |
21760099
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| Research Category |
Grant-in-Aid for Young Scientists (B)
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| Allocation Type | Single-year Grants |
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| Research Field |
Production engineering/Processing studies
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| Research Institution | Ritsumeikan University (2010)
Osaka University (2009) |
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Principal Investigator |
MURATA Junji Ritsumeikan University, 理工学部, 助教 (70531474)
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| Project Period (FY) |
2009 – 2010
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| Keywords | 窒化ガリウム / 光電気化学 / 固体酸触媒 / 平坦化加工 |
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| Research Abstract |
A novel planarization technique for the GaN (0001) surface has been developed. In this method, the surface is oxidized by a photo-electrochemical reaction and the resulting oxide is removed using a solid acidic/basic catalyst. Smooth surfaces that are free from scratches and etch pits are obtained. Photoluminescence analysis demonstrates that the intensity of the band-edge luminescence markedly increases after the planarization. Furthermore, Current-voltage measurements of Schottky barriers formed using the GaN substrates show that the polished GaN surface has a lower reverse leakage current, and that the barrier height and ideality factor are improved after the polishing treatment.
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