• Search Research Projects
  • Search Researchers
  • How to Use
  1. Back to project page

2010 Fiscal Year Final Research Report

Fundamental study on nonpolar AlInN alloys for polarized UV light emitting devices

Research Project

  • PDF
Project/Area Number 21760227
Research Category

Grant-in-Aid for Young Scientists (B)

Allocation TypeSingle-year Grants
Research Field Electronic materials/Electric materials
Research InstitutionTokyo National College of Technology (2010)
Tohoku University (2009)

Principal Investigator

ONUMA Takeyoshi  Tokyo National College of Technology, 一般教育科, 講師 (10375420)

Project Period (FY) 2009 – 2010
Keywords窒化物半導体 / AlInN / 結晶成長 / 光物性 / 非極性面 / 表面再結合
Research Abstract

In order to develop the potential ability of nonpolar AlInN alloys for polarized UV light emitters, m-plane AlInN films were grown by metal organic vapor phase epitaxy. Polarization characteristics of the near-band-edge emission in the films suffering from anisotropic stresses were analyzed by theoretical calculation for energies and oscillator strengths of the exciton transitions. Also, studies on the carrier recombination processes at the GaN surfaces indicated the polarization-induced electric field affects the surface recombination in GaN.

  • Research Products

    (5 results)

All 2011 2010

All Journal Article (1 results) Presentation (4 results)

  • [Journal Article] Surface recombination of hexagonal GaN crystals2011

    • Author(s)
      T.Onuma, N.Sakai, T.Okuhata, A.A.Yamaguchi, T. Honda,
    • Journal Title

      Physica Status Solidi (c) vol.8

      Pages: 1-13

  • [Presentation] 極性・非極性(Al, In, Ga)N混晶薄膜における振動子強度の歪依存性2011

    • Author(s)
      尾沼猛儀, 羽豆耕治, 秩父重英
    • Organizer
      2011年春季応用物理学会(26p-BY-9)
    • Place of Presentation
      神奈川工科大学
    • Year and Date
      2011-03-26
  • [Presentation] Surface recombination mechanism in hexagonal GaN crystals2010

    • Author(s)
      N.Sakai, T.Onuma, T.Okuhata, A.A.Yamaguchi T.Honda
    • Organizer
      The 9th International Symposium on Advanced Technology (ISAT9)(No.P-28.)
    • Place of Presentation
      Tokyo, Japan
    • Year and Date
      20101104-20101106
  • [Presentation] Surface recombination of hexagonal GaN crystals2010

    • Author(s)
      N.Sakai, T.Okuhata, T.Onuma, A.A.Yamaguchi, T.Honda
    • Organizer
      International Workshop on Nitride Semiconductors 2010 (IWN2010), Tampa(No.GP1.20.)
    • Place of Presentation
      Florida, USA
    • Year and Date
      20100919-20100924
  • [Presentation] 自立GaN 基板へのm 面Al_1-xIn_xN 薄膜のMOVPE成長2010

    • Author(s)
      秩父重英, 羽豆耕治, 尾沼猛儀
    • Organizer
      2010年春季応用物理学会(17p-TB-4)
    • Place of Presentation
      東海大学
    • Year and Date
      2010-03-17

URL: 

Published: 2012-02-13   Modified: 2016-04-21  

Information User Guide FAQ News Terms of Use Attribution of KAKENHI

Powered by NII kakenhi