2010 Fiscal Year Final Research Report

Superconductivity of Heavily Boron-Doped Diamond and Ultrananocrystalline Diamond.

Research Project

Project/Area Number	21760239
Research Category	Grant-in-Aid for Young Scientists (B)
Allocation Type	Single-year Grants
Research Field	Electronic materials/Electric materials
Research Institution	Ariake National College of Technology
Principal Investigator	HARA Takeshi Ariake National College of Technology, 電子情報工学科, 准教授 (20413867)
Project Period (FY)	2009 – 2010
Keywords	超伝導 / 超ナノ微結晶ダイヤモンド / ダイヤモンド / レーザーアブレーション / 同軸型アークプラズマ蒸着法
Research Abstract	The purpose of this study is to investigate the possibility as superconductive materials of boron doped ultrananocrystalline diamond (UNCD) thin films. The electrical conductivity of the boron doped UNCD was measured at the range of from 500K to 3.6K. We confirmed that the electrical conductivity of UNCD increased with the amount of doped boron, and the value was not possible to measure at the temperature of below 110K because of flaking of the ohmic electrode on the film surface of the boron doped UNCD. The adhesion strength of between the ohmic electrode and the boron doped UNCD thin films might be different depending on the value of measurement temperature. It is necessary to search for the electrode material that has high adhesion to film surface of boron doped UNCD. Through the solution of this problem, we estimate that the superconductive property of boron doped UNCD became apparent. We continue this study.