2011 Fiscal Year Final Research Report
Study of the fabrication and properties of the integration between Si-MEMS structure and nitride electronic and photonic devices
| Project/Area Number |
21760244
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| Research Category |
Grant-in-Aid for Young Scientists (B)
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| Allocation Type | Single-year Grants |
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| Research Field |
Electron device/Electronic equipment
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| Research Institution | Tohoku University |
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Principal Investigator |
HU FANGREN 東北大学, 大学院・工学科, 助教 (50396545)
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| Project Period (FY) |
2009 – 2011
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| Keywords | GaN / 結晶成長 / Si / センサ / 微細加工 |
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| Research Abstract |
Nitride semiconductor quantum-well, quantum dots and light-emitting diode structure were deposited on the flat Si, Si microstructure and Si-MEMS structure. High quantum efficiency and high emission were observed. Also, AlGaN/GaN HEMT was fabricated and typical transistor I/V property was obtained. Furthermore, micro pressure transducer was fabricated with the AlGaN/GaN HEMT by Si-micromaching process and the related properties were evaluated. The characteristics of the fabricated transistors were measured.
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