2010 Fiscal Year Final Research Report
Study of Erbium-Doped Silicon Oxide Film for Optical Emitter
| Project/Area Number |
21760249
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| Research Category |
Grant-in-Aid for Young Scientists (B)
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| Allocation Type | Single-year Grants |
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| Research Field |
Electron device/Electronic equipment
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| Research Institution | Utsunomiya University |
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Principal Investigator |
YODA Hidehiko Utsunomiya University, 工学研究科, 准教授 (30312862)
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| Project Period (FY) |
2009 – 2010
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| Keywords | シリコン / 光エミッタ |
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| Research Abstract |
Er-doped silicon oxide films (SiOx:Er) were deposited under various conditions and their optical and structural characteristics were evaluated. It was experimentally demonstrated that the composition (Si:O:Er) and band-gap energy of SiOx:Er films can be controlled by the sputtering condition of gas and/or temperature. A prototype of SiOx:Er optical emitter was fabricated and its PL characteristic was evaluated. It was demonstrated that the SiOx:Er film is emitted at the wavelength of 1534nm.
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Research Products
(5 results)
