2010 Fiscal Year Final Research Report
Heteroepitaxial growth of GaN on Silicon spheres and its application for high power light emitting diodes
| Project/Area Number |
21760258
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| Research Category |
Grant-in-Aid for Young Scientists (B)
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| Allocation Type | Single-year Grants |
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| Research Field |
Electron device/Electronic equipment
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| Research Institution | Shibaura Institute of Technology |
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Principal Investigator |
ISHIKAWA Hiroyasu Shibaura Institute of Technology, 工学部, 准教授 (20303696)
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| Project Period (FY) |
2009 – 2010
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| Keywords | 結晶成長 / 電子デバイス・機器 / ナノ材料 / マイクロ・ナノデバイス |
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| Research Abstract |
Novel technology based on GaN-on-silicon-sphere were investigated for high power and better light extraction efficiency GaN-based LEDs. Using Si (100) substrates as support submounts, silicon spheres could be fixed and unfixed on the submounts with low-melting-point lead glass. Moreover, correlation between luminescence characteristics and nanostructures in GaInN MQWs on Si substrates was investigated for improved performance. There was a strong correlation between strong luminescence characteristics and their nano- and micro-structures.
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