2010 Fiscal Year Final Research Report
Development of high-temperature and high-sensitivity diamond MEMS strain sensor
| Project/Area Number |
21760267
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| Research Category |
Grant-in-Aid for Young Scientists (B)
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| Allocation Type | Single-year Grants |
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| Research Field |
Electron device/Electronic equipment
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| Research Institution | National Institute for Materials Science |
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Principal Investigator |
LIAO Meiyong National Institute for Materials Science, センサ材料センター, 主任研究員 (70528950)
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| Project Period (FY) |
2009 – 2010
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| Keywords | 物理センサー / マイクロマシン |
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| Research Abstract |
In this Project, we proposed a novel device concept such as metal-piezoelectric-insulator-semiconductor field-effect transistor (MPIS)-FET for pressure sensors by using p-type diamond. During the period from 2009-2010, we developed various insulators such as Al_2O_3 and CaF_2 for the integration of Pb(Zr_<0.52>,Ti_<0.48>)O_3 (PZT) on diamond. We studied the effect of insulator on the crystallographic orientation, the remanent polarization of the PZT films. On the other hand, we developed the method for the fabrication of suspended structures of single crystal diamond. Finally, we evaluated the electric properties of the MPIS capacitor and the FET pressure sensor structures.
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Research Products
(25 results)
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[Presentation]2011
Author(s)
M.Y.Liao, S.HIshita, S.Koizumi, Y.Koide
Organizer
The 5th International Conference on New Diamond and Nano Carbon
Place of Presentation
Matsue, Japan.
Year and Date
20110516-20110520
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