Realization of ultra violet environment devices by using diamond and AlN hybrid structure

2010 Fiscal Year Final Research Report

• Project/Area Number: 21760268
• Research Category: Grant-in-Aid for Young Scientists (B)
• Allocation Type: Single-year Grants
• Research Field: Electron device/Electronic equipment
• Research Institution: National Institute for Materials Science
• Principal Investigator: IMURA Masataka National Institute for Materials Science, 国際ナノアーキテクトニクス研究拠点, ICYS-MANA研究員 (80465971)
• Project Period (FY): 2009 – 2010
• Keywords: ダイヤモンド / 窒化物半導体 / 電子デバイス / ヘテロ構造

Research Abstract

AlN epitaxial layers were successfully grown on diamond substrates as heteroepitaxial growth by MOVPE. The electronic devices, such as FETs, were fabricated by using AlN/diamond heterostructure. As a result, the device behaved as a p-channel FET with normally-on depletion mode. The AlN/diamond heterostructure FETs were highly promising for the next generation power electronics.

Research Products

• [Journal Article] Demonstration of Diamond Field Effect Transistors by AlN/Diamond Heterostructure (2011)
  • Author(s): M.Imura, R.Hayakawa, E.Watanabe, M.Y.Liao, Y.Koide, H.Amano
  • Journal Title: Physica Status Solidi (RRL) 3 Pages: 125-127
  • Peer Reviewed
• [Journal Article] Analysis of polar direction of AlN grown on (0001) sapphire and 6H-SiC substrates by high-temperature metal-organic vapor phase epitaxy using coaxial impact collision ion scattering spectroscopy (2010)
  • Author(s): M.Imura, T.Ohnishi, M.Sumiya, M.Y.Liao, Y.Koide, H.Amano, M.Lippmaa
  • Journal Title: Physica Status Solidi (c) 7 Pages: 2365-2367
  • Peer Reviewed
• [Journal Article] Growth mechanism of c-axis-oriented AlN on (111) diamond substrates by metal-organic vapor phase epitaxy (2010)
  • Author(s): M.Imura, K.Nakajima, M.Y.Liao, Y.Koide, H.Amano
  • Journal Title: Journal of Crystal Growth 312 Pages: 1325-1328
  • Peer Reviewed
• [Journal Article] Microstructure of AlN with two-domain structure on (001) diamond substrate grown by metal-organic vapor phase epitaxy (2010)
  • Author(s): M.Imura, K.Nakajima, M.Y.Liao, Y.Koide, H.Amano
  • Journal Title: Diamond, Related Materials 10 Pages: 131-133
  • Peer Reviewed
• [Journal Article] Growth mechanism of c-axis oriented AlN on (001) diamond substrates by metal-organic vapor phase epitaxy (2010)
  • Author(s): M.Imura, K.Nakajima, M.Y.Liao, Y.Koide, H.Amano
  • Journal Title: Journal of Crystal Growth 312 Pages: 368-372
  • Peer Reviewed
• [Presentation] Diamond Field Effect Transistors by AlN/Diamond Heterostructure (2011)
  • Author(s): M.Imura, R.Hayakawa, H.Oosato, E.Watanabe, D.Tsuya, M.Y.Liao, Y.Koide, H.Amanol.
  • Organizer: International Conference on New Diamond and Nano Carbons 2011 (NDNC2011)
  • Place of Presentation: Kunibiki Nesse, Matsue, Japan.
  • Year and Date: 2011-05-19
• [Presentation] Demonstration of AlN/Diamond Heterostructure Field Effect Transistors (2011)
  • Author(s): M.Imura, R.Hayakawa, H.Oosato, E.Watanabe, D.Tsuya, M.Y.Liao, Y.Koide, H.Amanol.
  • Organizer: MANA International Symposium 2011 (MANA Sympo.2011)
  • Place of Presentation: Epochal Tsukuba, Tsukuba, Japan.
  • Year and Date: 2011-03-03
• [Presentation] Growth of AlN on (001), (110), and (111) diamond substrates (2010)
  • Author(s): M.Imura, K.Nakajima, M.Y.Liao, Y.Koide, H.Amano
  • Organizer: The 4th International Conference on New Diamond and Nano Carbons (NDNC2010)
  • Place of Presentation: the Garden hotel, Suzhou, China.
  • Year and Date: 2010-05-17
• [Presentation] 様々な面のダイヤモンド基板上への窒化アルミニウム結晶成長 (2010)
  • Author(s): 井村将隆、中島清美、廖梅勇、小出康夫、天野浩
  • Organizer: 第57回応用物理学関係連合講演会
  • Place of Presentation: 東海大学.
  • Year and Date: 2010-03-18
• [Presentation] Microstructure of AlN layer on (001) and (111) diamond substrates by metal organic vapor phase epitaxy (2010)
  • Author(s): M.Imura, K.Nakajima, M.Y.Liao, Y.Koide, H.Amano
  • Organizer: MANA International Symposium 2010 (MANA Sympo.2010)
  • Place of Presentation: Epochal Tsukuba, Tsukuba, Japan.
  • Year and Date: 2010-03-04
• [Presentation] Analysis of polar direction of AlN grown by metal-organic vapor phase epitaxy using coaxial impact collision ion scattering spectroscopy (2009)
  • Author(s): M.Imura, T.Ohnishi, M.Sumiya, M.Y.Liao, Y.Koide, H.Amano, M.Lippmaa
  • Organizer: The 36th International Symposium on Compound Semiconductors (ISCS2009)
  • Place of Presentation: University of California, Santa Barbara, USA.
  • Year and Date: 2009-09-01
• [Presentation] Microstructure analysis for growth process of AlN layer on (001) and (111) diamond substrates by a metal-organic vapor phase epitaxy (2009)
  • Author(s): M.Imura, K.Nakajima, M.Y.Liao, Y.Koide, H.Amano
  • Organizer: The 17th American Conference on Crystal Growth and Epitaxy (ACCGE17)
  • Place of Presentation: Lake Geneva, Wisconsin, USA.
  • Year and Date: 2009-08-12
• [Presentation] MOVPE法による(001)面ダイヤモンド基板上の窒化アルミニウムの成長 (2009)
  • Author(s): 井村将隆、中島清美、廖梅勇、小出康夫、天野浩
  • Organizer: 第28回電子材料シンポジウム
  • Place of Presentation: ラフォーレ琵琶湖.
  • Year and Date: 2009-07-10
• [Presentation] Growth of AlN on (001) diamond substrate by metal-organic vapor phase epitaxy (2009)
  • Author(s): M.Imura, K.Nakajima, M.Y.Liao, Y.Koide, H.Amano
  • Organizer: The 3rd International Conference on New Diamond and Nano Carbons (NDNC2009)
  • Place of Presentation: Traverse City, Michigan, USA.
  • Year and Date: 2009-06-09
• [Patent(Industrial Property Rights)] 電界効果トランジスタ及びその製造方法 (2010)
  • Inventor(s): 井村将隆、小出康夫、リャオメイヨン、早川竜馬、天野浩
  • Industrial Property Rights Holder: 井村将隆
  • Industrial Property Number: 特願,特願2010-231352
  • Filing Date: 2010-10-14