2010 Fiscal Year Final Research Report
Control of interface magnetism of ultrathin film using magneto-electric effect
| Project/Area Number |
21760520
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| Research Category |
Grant-in-Aid for Young Scientists (B)
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| Allocation Type | Single-year Grants |
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| Research Field |
Physical properties of metals
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| Research Institution | Osaka University |
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Principal Investigator |
SHIRATSUCHI Yu Osaka University, 工学研究科, 助教 (70379121)
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| Project Period (FY) |
2009 – 2010
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| Keywords | スピンエレクトロニクス / α-Cr_2O_3 / 垂直交換バイアス / レアメタルフリー |
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| Research Abstract |
Interface magnetism and structure inα-Cr_2O_3/ferromagnetic thin film were investigated. It is fount that for a high perpendicular exchange bias, the similar in-plane atom arrangement between α-Cr_2O_3 and ferromagnetic layer and the crystalline quality ofα-Cr_2O_3were important. The perpendicular exchange bias of approximately 0.3 erg/cm^2was achieved which is a highest value among the reported values. On the basis of the obtained results, it was shown thatα-Cr_2O_3was a promising material for the rare-metal free non-volatile memory with low power consumption.
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Research Products
(38 results)
