2011 Fiscal Year Final Research Report
Creation of carbon semiconductor thin films containing silicon nanoparticles and their applications
Project/Area Number |
21760523
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Research Category |
Grant-in-Aid for Young Scientists (B)
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Allocation Type | Single-year Grants |
Research Field |
Inorganic materials/Physical properties
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Research Institution | Hirosaki University |
Principal Investigator |
NAKAZAWA Hideki 弘前大学, 大学院・理工学研究科, 准教授 (90344613)
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Project Period (FY) |
2009 – 2011
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Keywords | 電子・電気材料 / ナノ材料 / 半導体物性 / 光物性 |
Research Abstract |
We have deposited carbon thin films containing spherical particles by radio-frequency plasma-enhanced chemical vapor deposition using methane and organosilicon compounds such as monomethylsilane and dimethylsilane as the silicon sources. Chemical composition analyses revealed that particles from monomethylsilane were composed mainly of silicon. Pulsed substrate bias or intermittent supply of monomethylsilane was used to control the generation and growth of particles. In addition, the size and density of particles changed with dilution gases, deposition pressure, and substrate bias.
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[Journal Article] Effects of Silicon Source Gas and Substrate Bias on the Film Properties of Si-Incorporated Diamond-Like Carbon by Radio-Frequency Plasma-Enhanced Chemical Vapor Deposition2009
Author(s)
H. Nakazawa, T. Kinoshita, Y. Kaimori, Y. Asai, M. Suemitsu, T. Abe, K. Yasui, T. Endoh, T. Itoh, Y. Narita, Y. Enta, M. Mashita
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Journal Title
Japanese Journal of Applied Physics
Volume: Vol.48
Pages: 116002-1-116002-8
Peer Reviewed
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