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2010 Fiscal Year Final Research Report

Fabrication of metal nanotube inside transparent materials using optically-formed dislocations

Research Project

  • PDF
Project/Area Number 21760532
Research Category

Grant-in-Aid for Young Scientists (B)

Allocation TypeSingle-year Grants
Research Field Inorganic materials/Physical properties
Research InstitutionKyoto University

Principal Investigator

KANEHIRA Shingo  Kyoto University, 学際融合教育研究推進センター, 特定専門業務職員 (30437248)

Project Period (FY) 2009 – 2011
Keywords力学 / 電子 / 電磁 / 光 / 熱物性
Research Abstract

Sapphire single crystals were irradiated with femtosecond laser pulses to form defects inside and the defects were characterized using various methods in detail. The single crystals containing defects were annealed at 1200~1500℃ in air and their morphology change was observed. In addition, the sapphire sample containing defects were embedded inside the chromium oxide powder compact and annealed to promote the diffusion from the surface into inside.

  • Research Products

    (14 results)

All 2011 Other

All Journal Article (5 results) Presentation (8 results) Book (1 results)

  • [Journal Article] Morphology change from nano crack into periodic pore array formed by femtosecond laser pulses2011

    • Author(s)
      C.Moon, S.Kanehira, K.Miura, E.Tochigi, N.Shibata, Y.Ikuhara, K.Hirao
    • Journal Title

      J.Appl.Phys. 109

      Pages: 13517

  • [Journal Article] Silicon Precipitation via Photoinduced Reaction Using Femtosecond Laser

    • Author(s)
      M.Nishimura, S.Kanehira, M.Sakakura, Y.Shimotsuma, K.Miura, K.Hirao
    • Journal Title

      J.Nanosci. Nanotechnol. (in printing)

  • [Journal Article] Defect doping and characterization in oxide single crystals using femtosecond laser

    • Author(s)
      S.Kanehira, C.Moon, E.Tochigi, N.Shibata, Y.Ikuhara, K.Miura, K.Hirao
    • Journal Title

      2010 MRS fall meeting proceedings (in printing)

  • [Journal Article] Formation of Silicon and Silicon-Based Semiconductor Materials via Photoinduced Reaction Using Femtosecond Laser

    • Author(s)
      M.Nishimura, S.Kanehira, M.Sakakura, Y.Shimotsuma, K.Miura, K.Hirao
    • Journal Title

      2010 MRS fall meeting proceedings (in printing)

  • [Journal Article] Silicon Precipitation In Glass Via Photoinduced Reaction

    • Author(s)
      M.Nishimura, S.Kanehira, M.Sakakura, Y.Shimotsuma, K.Miura, K.Hirao
    • Journal Title

      IOP Conference Series : Materials Science and Engineering (in printing)

  • [Presentation] Formation mechanism and applications of laser induced elemental distribution in glasses (Invite)

    • Author(s)
      S.Kanehira, M.Nishimura, K.Miura, K.Hirao, et al.
    • Organizer
      International Symposium on Non-Oxide and New Optical Glasses (XVII ISNOG)
    • Place of Presentation
      in China.
  • [Presentation] レーザー光を用いた透明材料における欠陥構造制御

    • Author(s)
      兼平真悟
    • Organizer
      第17回レーザー夏の学校(招待ポスター)
  • [Presentation] 光誘起反応によるガラス/多層膜接合体へのFe-Si結晶析出と制御

    • Author(s)
      西村将和, 兼平真悟, 坂倉政明, 下間靖彦, 三浦清貴, 平尾一之
    • Organizer
      第51回ガラスおよびフォトニクス材料討論会
    • Place of Presentation
      東京
  • [Presentation] レーザーによるガラス内部の元素移動制御

    • Author(s)
      清水雅弘, 保田直美, 坂倉政明, 兼平真悟, 西正之, 下間靖彦, 三浦清貴, 平尾一之
    • Organizer
      第51回ガラスおよびフォトニクス材料討論
    • Place of Presentation
      東京
  • [Presentation] Silicon Precipitation in Glass via Photoinduced Reaction Using Femtosecond Laser

    • Author(s)
      M.Nishimura, S.Kanehira, et al.
    • Organizer
      3rd International Congress on Ceramics (ICC3) in Osaka
    • Place of Presentation
      Japan.
  • [Presentation] Phase transformation at interface using femtosecond laser irradiation

    • Author(s)
      S.Kanehira, M.Nishimura, K.Miura, K.Hirao
    • Organizer
      Visual-JW2010, in Osaka, Japan.
    • Place of Presentation
      Invite
  • [Presentation] Defect Doping and Characterization in Oxide Single Crystals Using Femtosecond Laser

    • Author(s)
      S.Kanehira, M.Nishimura, K.Miura, K.Hirao, et al.
    • Organizer
      2010 MRS fall meeting, in Boston
    • Place of Presentation
      USA.
  • [Presentation] Formation of Silicon and Silicon-Based Semiconductor Materials via Photoinduced Reaction Using Femtosecond Laser

    • Author(s)
      M.Nishimura, S.Kanehira, et al.
    • Organizer
      2010 MRS fall meeting, in Boston
    • Place of Presentation
      USA.
  • [Book] マイクロ・ナノ領域の超精密技術(日本学術振興会将来加工技術第136委員会編)(分担執筆)

    • Total Pages
      87-96

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Published: 2012-02-13   Modified: 2016-04-21  

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