2010 Fiscal Year Final Research Report
Development of high speed nitriding process in solid phase with controlled micro alloying elements
| Project/Area Number |
21760594
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| Research Category |
Grant-in-Aid for Young Scientists (B)
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| Allocation Type | Single-year Grants |
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| Research Field |
Material processing/treatments
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| Research Institution | Shizuoka Institute of Science and Technology (2010)
Hiroshima Kokusai Gakuin University (2009) |
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Principal Investigator |
YOSHIDA Masashi Shizuoka Institute of Science and Technology, 理工学部, 講師 (40460612)
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| Project Period (FY) |
2009 – 2010
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| Keywords | 窒化アルミニウム / 窒化 / アルミニウム / マグネシウム / 硬さ |
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| Research Abstract |
A novel method for the production of aluminum nitride is developed in this study. Aluminum nitride layers with high adhesion and high thick can be formed on aluminum surfaces using this method. The effect of alloying elements on the formation of aluminum nitride is also investigated. As the results, the growth of the nitride layer is obstructed by the copper and silicon in the alloying elements. The growth of the nitride layer is promoted by magnesium elements. Furthermore, the growth of the nitride layer also influences the microstructure as a grain boundary.
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