2010 Fiscal Year Final Research Report
Band structure controlling of graphene studied by ultrahigh-resolution angle-resolved photoemission spectroscopy
| Project/Area Number |
21840009
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| Research Category |
Grant-in-Aid for Research Activity Start-up
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| Allocation Type | Single-year Grants |
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| Research Field |
Condensed matter physics II
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| Research Institution | Tohoku University |
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Principal Investigator |
SUGAWARA Katsuaki 東北大学, 原子分子材料科学高等研究機構, 助教 (70547306)
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| Project Period (FY) |
2009 – 2010
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| Keywords | 物性実験 / ナノ材料 / 表面・界面物性 |
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| Research Abstract |
Recently, monolayer graphite (graphene)have attracted much attention because it shows various interesting physical properties. However, the detailed electronic responsible for the anomalous physical properties in graphene depended the number of layers has not been well understood yet. To elucidate the anomalous physical properties of graphene, we have performed high-resolution angle-resolved photoemission spectroscopy (ARPES)of monolayer and bilayer graphene on SiC (0001). We clearly observed the band structure deviated from ideal graphene on both monolayer and bilayer graphene growth on SiC (0001). These experimental results are explained in terms of the buffer layer.
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