2010 Fiscal Year Final Research Report
Bright Electroluminescence from Multiple-Stacked Structure of Valency Controlled Si-based Quantum Dots
| Project/Area Number |
21860061
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| Research Category |
Grant-in-Aid for Research Activity Start-up
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| Allocation Type | Single-year Grants |
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| Research Field |
Electronic materials/Electric materials
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| Research Institution | Nagoya University (2010)
Hiroshima University (2009) |
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Principal Investigator |
MAKIHARA Katsunori Nagoya University, 工学研究科, 助教 (90553561)
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| Project Period (FY) |
2009 – 2010
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| Keywords | Si量子ドット / Ge量子ドット / エレクトロルミネッセンス |
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| Research Abstract |
We have demonstrated self-assembling formation of one-dimensionally aligned Si-QDs by selective growth of Ge on pre-grown Si-QDs by LPCVD, in-situ oxidation, subsequent thermal desorption of Ge oxide and deposition of Si-QDs, and applied them to an active layer of light emitting diodes with a semitransparent Au gate. Under forward bias conditions over a threshold bias for LEDs on n-Si (100) substrate, a stable EL was observed in the near-infrared region at room temperature. Notice that the self-aligned Si-QDs enhance the emission intensity compared with the 2-fold stacking structure of the Si-QDs, with a result that the self-aligned structure is effective to increase recombination efficiency in EL. In addition, the formation of Pt-NDs by using the thermal plasma jet annealing of ultra-thin Pt films deposited on SiO_2 was successfully demonstrated without any extra heating. The millisecond rapid thermal annealing of ultra-thin metal films deposited on SiO_2 by using a thermal plasma jet is a very promising technique for the low temperature fabrication of metallic nanodots that can serve as charge storage nodes on SiO_2 layers.
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[Journal Article] Importance of Electronic State of Two-Dimensional Electron Gas for Electron Injection Process in Nano-Electronic Devices2010
Author(s)
M.Muraguchi, T.Endoh, Y.Takada, Y.Sakurai, S.Nomura, K.Shiraishi, M.Ikeda, K.Makihara, S.Miyazaki, Y.Shigeta
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Journal Title
Physica E Vol.42, Issue 10
Pages: 2602-2605
Peer Reviewed
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[Journal Article] Electron Tunneling between Si Quantum dots and Tow Dimensional Electron Gas under Optical Excitation at Low Temperatures2010
Author(s)
Y.Sakurai, Y.Takada, J-I Iwata, K.Shiraishi, S.Nomura, M.Muraguchi, T.Endoh, Y.Shigeta, M.Ikeda, K.Makihara, S.Miyazaki
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Journal Title
ECS Trans. Vol.28, No.1
Pages: 369-374
Peer Reviewed
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[Journal Article] Anomalous temperature dependence of electron tunneling between a two-dimensional electron gas and Si dots2010
Author(s)
Y.Sakurai, S.Nomura, Y.Takada, K.Shiraishi, M.Muraguchi, T.Endoh, Y.Shigeta, M.Ikeda, K.Makihara, S.Miyazaki
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Journal Title
Physica E Vol.42, Issue 4
Pages: 918-921
Peer Reviewed
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[Journal Article] Temperature Dependence of Electron Tunneling between Two Dimensional Electron Gas and Si Quantum Dots2010
Author(s)
Y.Sakurai, J.Iwata, M.Muraguchi, Y.Shigeta, Y.Takada, S.Nomura, T.Endoh, S.Saito, K.Shiraishi, M.Ikeda, K.Makihara, S.Miyazaki
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Journal Title
Jpn.J.Appl.Phys. Vol.49, No.1
Pages: 014001(4)
Peer Reviewed
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