Characterization of Chemical Bonding Features of Ti Oxide based ReRAM and Their Impact on Resistance-Switching Properties

2010 Fiscal Year Final Research Report

• Project/Area Number: 21860062
• Research Category: Grant-in-Aid for Research Activity Start-up
• Allocation Type: Single-year Grants
• Research Field: Electronic materials/Electric materials
• Research Institution: Hiroshima University
• Principal Investigator: OHTA Akio Hiroshima University, 大学院・先端物質科学研究科, 研究員 (10553620)
• Project Period (FY): 2009 – 2010
• Keywords: 抵抗変化型メモリ / メモリデバイス / 絶縁膜技術 / 光電子分光 / 化学結合状態分析

Research Abstract

The chemical bonding features in TiO_2-based Resistance Random Access Memory (ReRAM) after resistance change have been studied to gain a better understanding of the mechanism of resistance switching. For the Pt/TiO_2/Pt structure after resistance switching, the oxidation of Pt electrode at low resistance state (LRS) and the reduction of this PtO_x at high resistance state (HRS) were observed by hard X-ray photoelectron spectroscopy. The result suggests that generation of oxygen vacancies in Ti-oxide matrix is responsible for the formation of conductive pass resulting in LRS and that repeatable red-ox reaction at the Pt/TiO_2 interface plays an important role on resistance switching behavior. To change in the oxide network and to reduce the oxygen content in TiO_2, tri-valent Y ions were added into the oxide matrix of quadri-valent Ti ions. In Au/TiY_xO_y/Pt structures it has been demonstrated that the variations in resistance switching voltages are markedly suppressed by the Y_2_O3 addition into TiO_2.

Research Products

• [Journal Article] Evaluation of Chemical Structure and Resistance Switching Characteristics of Undoped Titanium Oxide and Titanium -Yttrium mixed Oxide (2011)
  • Author(s): Akio Ohta, Yuta Goto, Guobin Wei, Hideki Murakami, Seiichiro Higashi, Seiichi Miyazaki
  • Journal Title: Japanese Journal of Applied Physics to be published.
  • Peer Reviewed
• [Journal Article] The Impact of Y Addition into TiO_2 on Electronic States and Resistive Switching Characteristics (2011)
  • Author(s): Akio Ohta, Yuta Goto, Mohd Fairuz Kazalman, Guobin Wei, Hideki Murakami, Seiichiro Higashi, Seiichi Miyazaki
  • Journal Title: Japanese Journal of Applied Physics 50 to be published. Pages: 5
  • Peer Reviewed
• [Presentation] Ru添加したTiY_xO_yの抵抗変化特性評価 (2011)
  • Author(s): 大田晃生, 後藤優太, 三嶋健斗, Goubin Wei, 村上秀樹, 東清一郎, 宮崎誠一
  • Organizer: 平成23年春季第58回応用物理学関係連合講演会,25a-BZ-6,06-119
  • Place of Presentation: 神奈川,厚木,神奈川工科大学 文教キャンパス
  • Year and Date: 20110324-20110327
• [Presentation] Impact of Y_2O_3 Addition of Chemical Bonding Features and Resistance Switching of TiO_2 (2011)
  • Author(s): Akio Ohta, Yuta Goto, Guobin Wei, Hideki Murakami, Seiichiro Higashi, Seiichi Miyazaki
  • Organizer: 2011 International Workshop on Dielectric Thin Films for Future ULSI Devices (IWDTF), P-40, pp. 113-114
  • Place of Presentation: Tokyo Institute of Technology, Tokyo, Japan
  • Year and Date: 20110120-20110121
• [Presentation] The Impact of Y_O_3 Addition into TiO_2 On Electronic States and Resistive Switching Characteristics (2010)
  • Author(s): A.Ohta, Y.Goto, G.Wei, K.Makihara, H.Murakami, S.Higashi, S.Miyazaki
  • Organizer: 23rd International Microprocesses and Nanotechnology Conference (MNC2010), 11B-6-2
  • Place of Presentation: Rihga Royal Hotel Kokura, Fukuoka, Japan
  • Year and Date: 20101109-20101112
• [Presentation] Chemical Bonding Features at TiO_2/Pt Interface and Their Impact on Resistance-Switching Properties (2010)
  • Author(s): 後藤優太, 大田晃生, 村上秀樹, 東清一郎, 宮崎誠一
  • Organizer: The 2010 (International Meeting for Future of Electror Devices, Kansai (IMFEDK), PB-4 p. 114
  • Place of Presentation: Kansai University Centenary Memorial Hall, Osaka, Japan
  • Year and Date: 20100513-20100514
• [Presentation] TiY_xO_y膜の化学結合状態分析および抵抗変化特性評価 (2010)
  • Author(s): 大田晃生, モハマドファイルズカマルザン, 後藤優太, 村上秀樹, 東清一郎, 宮崎誠一
  • Organizer: 平成21年春季第57回応用物理学関係連合講演会,20a-TQ-40,6-221
  • Place of Presentation: 神奈川、平塚、東海大学湘南キャンパス
  • Year and Date: 20100317-20100320
• [Presentation] TiO_2/Pt界面における化学結合状態分析と抵抗変化特性評価 (2010)
  • Author(s): 後藤優太, 貫目大介, 大田晃生,尉国浜, 村上秀樹, 東清一郎, 宮崎誠一
  • Organizer: ゲートスタック研究会第15回研究会極薄シリコン酸化膜の形成・評価・信頼性,P-26, pp.209-213
  • Place of Presentation: 静岡、三島、東レ総合研修センター
  • Year and Date: 20100122-20100123
• [Presentation] TiO_2へのY添加が電子状態および抵抗変化特性に与える影響 (2010)
  • Author(s): 大田晃生, 後藤優太, モハマド ファイルズ カマルザン, 村上秀樹, 東清一郎, 宮崎誠一
  • Organizer: 電気通信情報学会(SDM)[シリコン材料・デバイス]シリコンテクノロジー分科会6月度合同研究会SDM2010-38 pp.27-32
  • Place of Presentation: 東京、東京大学駒場リサーチキャンパス生産技術研究所
  • Year and Date: 2010-06-22
• [Presentation] X線光電子分光法によるTiO_2/Pt界面の化学結合状態分析 (2009)
  • Author(s): 後藤優太, 貫目大介, 大田晃生, 尉国浜, 村上秀樹, 東清一郎, 宮崎誠一
  • Organizer: 2009年第70回秋季応用物理学会学術講演会,9a-H-4, p.550
  • Place of Presentation: 富山、富山大学
  • Year and Date: 20090908-20090911
• [Presentation] TiO_2/Pt界面の化学結合および電子状態評価 (2009)
  • Author(s): 後藤優太、大田晃生、貫目大介、尉国浜、村上秀樹、東清一郎、宮崎誠一
  • Organizer: 電気通信情報学会(SDM)[シリコン材料・デバイス]シリコンテクノロジー分科会6月度合同研究会,SDM2009-44,pp.99-103
  • Place of Presentation: 東京、東京大学駒場リサーチキャンパス生産技術研究所
  • Year and Date: 2009-06-19