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2023 Fiscal Year Annual Research Report

Innovation in atomically controlled engineering of plasma etching technology with builiding a collaborative environment for theory, computation, and measurement

Research Project

Project/Area Number 21H01073
Research InstitutionNagoya University

Principal Investigator

関根 誠  名古屋大学, 低温プラズマ科学研究センター, 特任教授 (80437087)

Co-Investigator(Kenkyū-buntansha) 堤 隆嘉  名古屋大学, 低温プラズマ科学研究センター, 講師 (50756137)
石川 健治  名古屋大学, 低温プラズマ科学研究センター, 教授 (60417384)
Project Period (FY) 2021-04-01 – 2024-03-31
Keywordsプラズマ / エッチング
Outline of Annual Research Achievements

人類及び地球の繁栄のための持続的な開発を推進する上で,電子情報ナノシステムの発展は欠かせない.システムを構成する集積回路・センサ・アクチュエータなどの素子の作製は,微細加工・プラズマエッチングが基盤技術となり,現在1原子1分子レベルの反応プロセス制御『アトミックスケールエンジニアリング』が要求されるにもかかわらず,プラズマエッチング技術の開発には,試行錯誤が繰り返され,理論に基づく予測や原理に則した革新的な技術が創出されているとは言い難い.このような背景から,エッチング反応の原理的な解明が必要である.本研究では,この解明を達成する為,反応過程をⅠ)気相中反応,Ⅱ)活性種輸送,Ⅲ)表面反応の3段階に階層化し,階層的に解析スキームを構築することを目指す.それぞれ,原理的な理論構築から計算科学を活用したシミュレーション予測,反応を素過程に細分化した実証・検証実験,さらに大量生産に対応できるエッチング装置での実験,プラズマと表面の相互作用の進展を動力学解析等で実施する.すなわち,理論-計算-実験を統合した研究基盤を構築するアプローチを探索しながら,プラズマと表面の相互作用の『アトミックスケールエンジニアリング』を学問体系化し,次代イノベーション電子情報デバイスの創出に貢献する基盤技術を開拓する.今年度は,バーチャル実験環境の構築に,高アスペクト比構造の高材料選択比プラズマエッチング加工を取り上げた.そこで,過去においてもエッチング使用の経験のないハイドロフルオロカーボンのガスに着目し,数々の分子について量子化学計算を進め,電子衝突が及ぼす励起解離の予測に取り組んだ.

Research Progress Status

令和5年度が最終年度であるため、記入しない。

Strategy for Future Research Activity

令和5年度が最終年度であるため、記入しない。

  • Research Products

    (38 results)

All 2024 2023

All Journal Article (10 results) (of which Int'l Joint Research: 2 results,  Peer Reviewed: 10 results,  Open Access: 3 results) Presentation (28 results) (of which Int'l Joint Research: 28 results,  Invited: 3 results)

  • [Journal Article] <i>In situ</i> atom-resolved observation of Si (111) 7×7 surface with F radical and Ar ion irradiation simulated atomic layer etching2024

    • Author(s)
      Tsutsumi Takayoshi、Asano Atsuki、Kondo Hiroki、Ishikawa Kenji、Sekine Makoto、Hori Masaru
    • Journal Title

      Journal of Vacuum Science &amp; Technology A

      Volume: 42 Pages: 032603

    • DOI

      10.1116/6.0003432

    • Peer Reviewed
  • [Journal Article] Dissociative properties of C<sub>4</sub>F<sub>6</sub> obtained using computational chemistry2024

    • Author(s)
      Hayashi Toshio、Ishikawa Kenji、Sekine Makoto、Hori Masaru
    • Journal Title

      Japanese Journal of Applied Physics

      Volume: 63 Pages: 04SP26~04SP26

    • DOI

      10.35848/1347-4065/ad3166

    • Peer Reviewed
  • [Journal Article] Low-temperature growth at 225?°C and characterization of carbon nanowalls synthesized by radical injection plasma-enhanced chemical vapor deposition2024

    • Author(s)
      Minh Ngo Quang、Van Nong Ngo、Oda Osamu、Ishikawa Kenji、Hori Masaru
    • Journal Title

      Vacuum

      Volume: 224 Pages: 113180~113180

    • DOI

      10.1016/j.vacuum.2024.113180

    • Peer Reviewed / Int'l Joint Research
  • [Journal Article] Nitrogen admixture effects on growth characteristics and properties of carbon nanowalls2024

    • Author(s)
      Christy Peter Raj Dennis、Van Nong Ngo、Britun Nikolay、Minh Ngo Quang、Nguyen Thi-Thuy-Nga、Kondo Hiroki、Oda Osamu、Ishikawa Kenji、Hori Masaru
    • Journal Title

      Thin Solid Films

      Volume: 795 Pages: 140322~140322

    • DOI

      10.1016/j.tsf.2024.140322

    • Peer Reviewed / Int'l Joint Research
  • [Journal Article] Plasma-Driven Sciences: Exploring Complex Interactions at Plasma Boundaries2024

    • Author(s)
      Ishikawa Kenji、Koga Kazunori、Ohno Noriyasu
    • Journal Title

      Plasma

      Volume: 7 Pages: 160~177

    • DOI

      10.3390/plasma7010011

    • Peer Reviewed / Open Access
  • [Journal Article] Surface sulfurization of amorphous carbon films in the chemistry of oxygen plasma added with SO2 or OCS for high-aspect-ratio etching2024

    • Author(s)
      Ishikawa Kenji、Nguyen Thi-Thuy-Nga、Aoki Yuta、Sato Hiroyasu、Kawakami Junichi、Tsuno Shuji、Hsiao Shih-Nan、Hori Masaru
    • Journal Title

      Applied Surface Science

      Volume: 645 Pages: 158876~158876

    • DOI

      10.1016/j.apsusc.2023.158876

    • Peer Reviewed / Open Access
  • [Journal Article] Bias-supply timing tailored to the aspect ratio dependence of silicon trench etching in Ar plasma with alternately injected C4F8 and SF62023

    • Author(s)
      Yoshie Taito、Ishikawa Kenji、Nguyen Thi-Thuy-Nga、Hsiao Shih-Nan、Tsutsumi Takayoshi、Sekine Makoto、Hori Masaru
    • Journal Title

      Applied Surface Science

      Volume: 638 Pages: 157981~157981

    • DOI

      10.1016/j.apsusc.2023.157981

    • Peer Reviewed / Open Access
  • [Journal Article] An approach to reduce surface charging with cryogenic plasma etching using hydrogen-fluoride contained gases2023

    • Author(s)
      Hsiao Shih-Nan、Sekine Makoto、Ishikawa Kenji、Iijima Yuki、Ohya Yoshinobu、Hori Masaru
    • Journal Title

      Applied Physics Letters

      Volume: 123 Pages: 212106

    • DOI

      10.1063/5.0173553

    • Peer Reviewed
  • [Journal Article] Gas-phase study of the behavior of trimethyl gallium and triethyl gallium by optical emission spectroscopy and quadrupole mass spectroscopy for the growth of GaN by REMOCVD (radical-enhanced metalorganic chemical vapor deposition)2023

    • Author(s)
      Dhasiyan Arun Kumar、Jayaprasad Swathy、Amalraj Frank Wilson、Shimizu Naohiro、Oda Osamu、Ishikawa Kenji、Hori Masaru
    • Journal Title

      Japanese Journal of Applied Physics

      Volume: 62 Pages: SN1019~SN1019

    • DOI

      10.35848/1347-4065/acfd34

    • Peer Reviewed
  • [Journal Article] Manipulation of etch selectivity of silicon nitride over silicon dioxide to a-carbon by controlling substrate temperature with a CF4/H2 plasma2023

    • Author(s)
      Hsiao Shih-Nan、Britun Nikolay、Nguyen Thi-Thuy-Nga、Tsutsumi Takayoshi、Ishikawa Kenji、Sekine Makoto、Hori Masaru
    • Journal Title

      Vacuum

      Volume: 210 Pages: 111863~111863

    • DOI

      10.1016/j.vacuum.2023.111863

    • Peer Reviewed
  • [Presentation] Cryogenic Atomic Layer Etching of Silicon Nitride Alternating Surface Modification with HF Purge and Ar Plasma2024

    • Author(s)
      Shih-Nan Hsiao, Makoto Sekine, Yuki Iijima and Masaru Hori
    • Organizer
      ISPlasma2024/IC-PLANTS2024/APSPT-13, 2024/3/3-3/7, Nagoya, Japan
    • Int'l Joint Research
  • [Presentation] Determination of ground state atomic concentrations during etching process2024

    • Author(s)
      Michael K. T. Mo, S.-N. Hsiao, M. Sekine, M. Hori, and N. Britun
    • Organizer
      ISPlasma2024/IC-PLANTS2024/APSPT-13, 2024/3/3-3/7, Nagoya, Japan
    • Int'l Joint Research
  • [Presentation] Selective Etching of SiO2 and SiN over Polycrystalline Si Using PF3/H2 Plasmas2024

    • Author(s)
      Chih-Yu Ma, Shih-Nan Hsiao, Michael K. T. Mo, Nikolay Britun, Makoto Sekine and Masaru Hori
    • Organizer
      ISPlasma2024/IC-PLANTS2024/APSPT-13, 2024/3/3-3/7, Nagoya, Japan
    • Int'l Joint Research
  • [Presentation] Atomic layer etching of platinum with sequential exposure to high -density oxygen/argon plasma and formic acid vapor at low temperature2024

    • Author(s)
      Thi-Thuy-Nga Nguyen, Daijiro Akagi, Toshiyuki Uno, Takeshi Okato, Kenji Ishikawa, and Masaru Hori
    • Organizer
      ISPlasma2024/IC-PLANTS2024/APSPT-13, 2024/3/3-3/7, Nagoya, Japan
    • Int'l Joint Research
  • [Presentation] A pseudo-wet cryogenic plasma etching of SiO2 investigated with in-situ surface monitoring2023

    • Author(s)
      S-N Hsiao, M. Sekine, K. Ishikawa, T.Tsutsumi, and M. Hori Y Iijima, R. Suda, Y. Kihara
    • Organizer
      The 44th International Symposium on Dry Process (DPS2023), 2023/11/21-22, Nagoya, Japan
    • Int'l Joint Research
  • [Presentation] Hydrofluorocarbon Molecule Dissociation through Photoeoctron-Photoion Coincidence (PEPICO) Studies2023

    • Author(s)
      Tran Trung Nguyen, Toshio Hayashi, Hiroshi Iwayama, Shih-Nan Hsiao, Makoto Sekine, Masaru Hori and Kenji Ishikawa,
    • Organizer
      The 44th International Symposium on Dry Process (DPS2023), 2023/11/21-22, Nagoya, Japan
    • Int'l Joint Research
  • [Presentation] Etch selectivities of SiO2 and SiN against a-C films using CF4/H2 plasma at low temperature2023

    • Author(s)
      Y. Imai, S-N. Hsiao, M. Sekine, K. Ishikawa, T. Tsutsumi, M. Iwata, M. Tomura,Y. Iijima, K. Matsushima and M. Hori
    • Organizer
      The 44th International Symposium on Dry Process (DPS2023), 2023/11/21-22, Nagoya, Japan
    • Int'l Joint Research
  • [Presentation] Dissociative properties of C4F6 obtained using computational chemistry2023

    • Author(s)
      T. Hayashi, K. Ishikawa, M. Sekine, and M. Hori
    • Organizer
      The 44th International Symposium on Dry Process (DPS2023), 2023/11/21-22, Nagoya, Japan
    • Int'l Joint Research
  • [Presentation] Simultaneous measurements of F, O and H ground state atom density in an industry-grade etching plasma2023

    • Author(s)
      M. K. T. Mo, S.-N. Hsiao, M. Sekine, M. Hori, and N. Britun
    • Organizer
      The 44th International Symposium on Dry Process (DPS2023), 2023/11/21-22, Nagoya, Japan
    • Int'l Joint Research
  • [Presentation] Electron-Beam-Assisted Self-limiting fluorination of GaN surface using XeF2 for Atomic Layer Etching2023

    • Author(s)
      Y. Izumi, T. Tsutsumi, H Kondo, M. Sekine, M. Hori, and K. Ishikawa
    • Organizer
      The 44th International Symposium on Dry Process (DPS2023), 2023/11/21-22, Nagoya, Japan
    • Int'l Joint Research
  • [Presentation] Compositions of Ions Related with Electrode Materials in Pulsed Plasma for High-Aspect-Ratio Hole Etching2023

    • Author(s)
      K. Toji, T. Tsutsumi, S-N. Hsiao, M. Sekine, M. Hori, and K. Ishikawa
    • Organizer
      The 44th International Symposium on Dry Process (DPS2023), 2023/11/21-22, Nagoya, Japan
    • Int'l Joint Research
  • [Presentation] Control of etching profile by bias supply timing in cyclic process using C4F8/SF6 gas modulated plasma2023

    • Author(s)
      T. Yoshie, K. Ishikawa, T. Tsutsumi, M. Sekine, and M. Hori
    • Organizer
      The 44th International Symposium on Dry Process (DPS2023), 2023/11/21-22, Nagoya, Japan
    • Int'l Joint Research
  • [Presentation] A mechanism for cryogenic etching of SiO2 using CF4/H2 and HF plasmas based on in-situ monitoring techniques2023

    • Author(s)
      Shih-Nan Hsiao, Yusuke Imai, Makoto Sekine, Nikolay Britun, Michael K. T. Mo, Yuki Iijima, Ryutaro Suda, Yoshinobu Ohya, Yoshihide Kihara, and Masaru Hori
    • Organizer
      36th International Microprocesses and Nanotechnology Conference (MNC 2023), 2023/11/14-17, Sapporo, Japan
    • Int'l Joint Research
  • [Presentation] Surface reactions during atomic layer etching of platinum by high-density nitrogen-oxygen plasma and organic acid vapor2023

    • Author(s)
      Thi-Thuy-Nga Nguyen, Kazunori Shinoda, Hirotaka Hamamura, Kenji Maeda, Kenetsu Yokogawa, Masaru Izawa, Kenji Ishikawa, and Masaru Hori
    • Organizer
      AAPPS-DPP2023, 2023/11/12-17, Nagoya, Japan
    • Int'l Joint Research / Invited
  • [Presentation] Plasma Etching Technology Next Milestone of Assurance Energy and Environment2023

    • Author(s)
      Kenji Ishikawa
    • Organizer
      Advanced Metallization Conference 2023 32nd Asian Session (ADMETA Plus 2023)
    • Int'l Joint Research / Invited
  • [Presentation] Surface reactions during atomic layer etching of platinum by high-density nitrogen-oxygen plasma and organic acid vapor2023

    • Author(s)
      Thi-Thuy-Nga Nguyen, Daijiro Akagi, Toshiyuki Uno, Takeshi Okato, Kenji Ishikawa, and Masaru Hori
    • Organizer
      AVS 69th International Symposium and Exhibition (AVS 69), 2023/11/5-10, Portland, USA
    • Int'l Joint Research
  • [Presentation] A pseudo-wet plasma etching mechanism for SiO2 at cryogenic temperature using hydrogen fluoride gas with in-situ surface monitoring2023

    • Author(s)
      Shih-Nan Hsiao, Makoto Sekine, Yuki Iijima, Ryutaro Suda, Yoshinobu Ohya, Yoshihide Kihara, Takayoshi Tsutsumi, Kenji Ishikawa, Masaru Hori
    • Organizer
      AVS 69th International Symposium and Exhibition (AVS 69), 2023/11/5-10, Portland, USA
    • Int'l Joint Research
  • [Presentation] Etching Selectivities of SiO2 and SiN Against a-C Films Using CF4/H2 with a Pseudo-Wet Plasma Etching Mechanism2023

    • Author(s)
      Yusuke Imai, S. Hsiao, M. Sekine, T. Tsutsumi, K. Ishikawa, M. Iwata, M. Tamura, Y. Iijima, T. Gohira, K. Matsushima, Y. Ohya, M. Hori,
    • Organizer
      AVS 69th International Symposium and Exhibition (AVS 69), 2023/11/5-10, Portland, USA
    • Int'l Joint Research
  • [Presentation] Transient behavior of cycle process in Ar plasma with alternately injected C4F8 and SF62023

    • Author(s)
      Taito Yoshie, Kenji Ishikawa, Thi-Thuy-Nga Nguyen, Shih-Nan Hsiao, Takayoshi Tsutsumi, Makoto Sekine, and Masaru Hori
    • Organizer
      13th Asian-European International Conference on Plasma Surface Engineering (AEPSE 2023), 2023/11/5-8, Busan, Korea
    • Int'l Joint Research
  • [Presentation] Unravelling Dissociation of Hydrofluorocarbon Molecules through Photoelectron-Photoion Coincidence (PEPICO) Studies2023

    • Author(s)
      Tran Trung Nguyen, Kenji Ishikawa, Toshio Hayashi, Hiroshi Iwayama, Shih-Nan Hsiao, Makoto Sekine, and Masaru Hori
    • Organizer
      13th Asian-European International Conference on Plasma Surface Engineering (AEPSE 2023), 2023/11/5-8, Busan, Korea
    • Int'l Joint Research
  • [Presentation] On the mechanism of high-speed SiO2 etching using hydrogen fluoride-contained plasmas at cryogenic temperature2023

    • Author(s)
      Shih-Nan Hsiao, Makoto Sekine, Nikolay Britun, Michael Kin-Ting Mo, Yusuke Imai, Takayoshi Tsusumi, Kenji Ishikawa, Yuki Iijima, Masahiko Yokoi, Ryutaro Suda, Yoshihide Kihara and Masaru Hori
    • Organizer
      Global Plasma Forum in Aomori , 2023/10/15-18, Aomori, Japan
    • Int'l Joint Research
  • [Presentation] Simultaneous measurements of F, O and H ground state atom density in an industry-grade etching plasma2023

    • Author(s)
      M. K. T. Mo, S.-N. Hsiao, M. Sekine, M. Hori, and N. Britun
    • Organizer
      Global Plasma Forum in Aomori , 2023/10/15-18, Aomori, Japan
    • Int'l Joint Research
  • [Presentation] Plasma-based pseudo-wet mechanism for cryogenic SiO2 etching using hydrogen-contained fluorocarbon gases with an in-situ surface analysis2023

    • Author(s)
      Shih-Nan Hsiao, Makoto Sekine, Takayoshi Tsutsumi, Kenji Ishikawa, Manabu Iwata, Maju Tomura, Yuki Iijima, Taku Gohira, Keiichi Matsushima, Yoshinobu Ohya, Masaru Hori
    • Organizer
      The 76th Annual Gaseous Electronics Conference (GEC76), 2023/10/9-13, Michigan, USA
    • Int'l Joint Research
  • [Presentation] Non-Halogen Plasma for Selective Removal of Titanium Compounds Applied in Advanced Atomic Layer Etching2023

    • Author(s)
      Thi-Thuy-Nga Nguyen, K. Shinoda, S. Hsiao, H. Hamamura, Maeda, K. Yokogawa, M. Izawa, K. Ishikawa, M. Hori
    • Organizer
      23rd International Conference on Atomic Layer Deposition, 10th International Atomic Layer Etching Workshop (ALD/ALE2023), 2023/7/23-26, Washington, USA
    • Int'l Joint Research
  • [Presentation] Frontiers of Plasma Etching Technology for Advanced Semiconductor Devices2023

    • Author(s)
      Kenji Ishikawa
    • Organizer
      International Conference on Phenomena in Ionized Gases ICPIG XXXV , 2023/7/10-14, the Netherland
    • Int'l Joint Research / Invited
  • [Presentation] Atomic layer etching of SiN films with CF4/H2 surface modification and H2/N2 plasma exposure2023

    • Author(s)
      Shih-Nan Hsiao, Makoto Sekine1 and Masaru Hori
    • Organizer
      International Conference on Phenomena in Ionized Gases ICPIG XXXV , 2023/7/10-14, the Netherland
    • Int'l Joint Research
  • [Presentation] A comparative study on the CF4/H2 and HF/H2 plasmas for etching of highly hydrogenated SiN films2023

    • Author(s)
      Shih-Nan Hsiao, Nikolay Britun, Thi-Thuy-Nga Nguyen, Takayoshi Tsutsumi, Kenji Ishikawa, Makoto Sekine, and Masaru Hori
    • Organizer
      25th International Symposium on Plasma Chemistry (ISPC25), 2023/5/21-26, Kyoto, Japan
    • Int'l Joint Research
  • [Presentation] Global and local contribution analysis of process parameters in Plasma enhanced chemical vapor deposition of amorphous carbon har2023

    • Author(s)
      Yusuke Ando, Jumpei Kurokawa, Hiroki Kondo, Takayoshi Tsutsumi, Kenji Ishikawa, Makoto Sekine, and Masaru Hori
    • Organizer
      The 4th International Conference on Data Driven Plasma Sciences ( ICDDPS-4 ), 2023/4/16-21, Okinawa, Japan
    • Int'l Joint Research

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Published: 2024-12-25  

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