2023 Fiscal Year Final Research Report
Development of power transistors using ultra-wide-bandgap AlN-based semiconductors
| Project/Area Number |
21H01389
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| Research Category |
Grant-in-Aid for Scientific Research (B)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Review Section |
Basic Section 21060:Electron device and electronic equipment-related
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| Research Institution | Nagoya Institute of Technology |
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Principal Investigator |
Miyoshi Makoto 名古屋工業大学, 工学(系)研究科(研究院), 教授 (30635199)
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| Co-Investigator(Kenkyū-buntansha) |
佐藤 威友 北海道大学, 量子集積エレクトロニクス研究センター, 准教授 (50343009)
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| Project Period (FY) |
2021-04-01 – 2024-03-31
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| Keywords | 窒化物半導体 / パワートランジスタ / 高周波トランジスタ |
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| Outline of Final Research Achievements |
Aluminum nitride (AlN) is viewed as semiconductor material for next-generation power electronic devices due to its superior properties exceeding GaN and SiC. AlN also has high chemical stability and excellent mechanical strength and hardness. However, these properties also pose technical difficulties when considering application to practical device manufacturing. In this study, we conducted study on the crystal growth and the device prototype fabrication using AlN-based heterostructure electronic devices. As a result of our research, we successfully fabricated AlGaN-channel power transistors with AlN mole fractions up to 70% and high-frequency transistors using single-crystal AlN substrates, and confirmed their good device characteristics.
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| Free Research Field |
電子デバイス、半導体結晶工学
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| Academic Significance and Societal Importance of the Research Achievements |
窒化アルミニウム(AlN)は、次世代パワーデバイス材料としてGaNやSiCなど既存の半導体材料を凌駕する物性を備えているが、ウルトラワイドバンドギャップ半導体の特徴でもある化学的安定性や機械的強度・硬度に起因してデバイス作製が困難であった。本研究を遂行した事で、AlN系半導体トランジスタの設計、結晶成長、デバイスプロセスについて、多くの知見を得る事が出来た。本研究で得られた知見は、電子デバイス応用に限らず、AlN系半導体を用いた光・電子デバイスの実現に大きく寄与できる。
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