2023 Fiscal Year Final Research Report
Systematic understanding on surface processing by anodization of SiC, and its application in structural and electronic materials
| Project/Area Number |
21H01670
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| Research Category |
Grant-in-Aid for Scientific Research (B)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Review Section |
Basic Section 26050:Material processing and microstructure control-related
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| Research Institution | Kyoto University |
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Principal Investigator |
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| Co-Investigator(Kenkyū-buntansha) |
北田 敦 東京大学, 大学院工学系研究科(工学部), 准教授 (30636254)
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| Project Period (FY) |
2021-04-01 – 2024-03-31
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| Keywords | 陽極酸化 / シリコンカーバイド / ダイヤモンド |
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| Outline of Final Research Achievements |
Since silicon carbide and diamond are stable materials, their surface processing is extremely difficult. In this study, we investigated how the formation of point defects generated by high-energy ion irradiation and phonon excitation by mid-infrared free electron laser irradiation affect the anodization of these materials. In the case of silicon carbide, the LO and TO phonon modes exist, and we clarified that the TO mode excitation promotes the anodization of silicon carbide. We also found that a homogeneous SiO2 thin layer was electrochemically formed on the SiC surface by using a concentrated aqueous solution. In addition, we demonstrated that the anodization of a boron-doped diamond was also promoted by the defect formation by high-energy ion irradiation.
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| Free Research Field |
材料電気化学
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| Academic Significance and Societal Importance of the Research Achievements |
本研究ではシリコンカーバイドやダイヤモンドといった次世代半導体として期待される材料の表面加工法を確立した点が最も意義のある結果といえる。Siの表面加工はSiをベースとしたエレクトロニクスの基盤技術であったが、同様の処理をシリコンカーバイドやダイヤモンドに対して行う方法論は未開拓であった。本研究により、格子欠陥の制御や格子振動励起によってこれら難加工材の電気化学反応活性を向上させられることが明らかとなり、今後、この手法を洗練させることで難加工材の新たな表面処理技術として一般化できるものと期待される。
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