Design of 2D heterostructures by crystal growth

2023 Fiscal Year Final Research Report

• Project/Area Number: 21H01768
• Research Category: Grant-in-Aid for Scientific Research (B)
• Allocation Type: Single-year Grants
• Section: 一般
• Review Section: Basic Section 28030:Nanomaterials-related
• Research Institution: Kwansei Gakuin University
• Principal Investigator: Hibino Hiroki 関西学院大学, 工学部, 教授 (60393740)
• Co-Investigator(Kenkyū-buntansha): 影島 博之 島根大学, 学術研究院理工学系, 教授 (70374072)
• Project Period (FY): 2021-04-01 – 2024-03-31
• Keywords: グラフェン / 六方晶窒化ホウ素 / 化学気相成長 / ヘテロ構造 / 第一原理計算 / 二硫化モリブデン

Outline of Final Research Achievements

We have so far reported that lateral and vertical heterostructures of graphene (Gr) and hexagonal boron nitride (h-BN) can be selectively formed on Cu surfaces depending on the growth sequence. In this study, we demonstrated that the etching of h-BN during the growth of Gr, which was a challenge in forming vertical heterostructures, can be suppressed by adjusting the growth atmosphere and the type of carbon source gas. Additionally, we performed first-principles calculations of the adsorption energy of various growth precursors on Cu surfaces partially covered with Gr or h-BN and elucidated that the transition between lateral and vertical growth modes is determined by whether the edges of Gr or h-BN islands are hydrogen-terminated. Furthermore, we achieved the growth of MoS2 on sapphire directly grown with Gr or h-BN.

Free Research Field

表面科学

Academic Significance and Societal Importance of the Research Achievements

グラフェンの発見以来、数多くの二次元（2D）物質が作製され、その広範なライブラリが構築されている。2D物質はそれぞれが得意の応用分野を持つだけでなく、ヘテロ構造による新しい物理や機能の発現に大きな期待がある。本研究により得られた2Dヘテロ構造の結晶成長機構に関する知見は、デザインされた2Dヘテロ構造を作製する技術の確立を通して、2D物質の産業応用に貢献する。