Grading of silicon isotope thin films using localized hydrogen functionalities for quantum computing

2023 Fiscal Year Final Research Report

• Project/Area Number: 21H01808
• Research Category: Grant-in-Aid for Scientific Research (B)
• Allocation Type: Single-year Grants
• Section: 一般
• Review Section: Basic Section 29020:Thin film/surface and interfacial physical properties-related
• Research Institution: Nagoya University
• Principal Investigator: MIYAMOTO Satoru 名古屋大学, 工学研究科, 特任准教授 (70709097)
• Project Period (FY): 2021-04-01 – 2024-03-31
• Keywords: シリコン / 半導体 / 同位体 / 局在水素 / 量子計算

Outline of Final Research Achievements

We have developed a methodology and fundamental technology for interface control using localized hydrogens in silicon isotope thin films that implement silicon-based qubits. We have succeeded in developing an efficient condition search method by process measurement of hydrogen incorporation and desorption, highly sensitive detection and precise evaluation of hydrogen cluster defects with isotope engineering, and an apparatus capable of room-temperature evaluation of electrical noise originating from device interface. We also verified the qubit performance of valley separation using isotopically engineered silicon thin films as quantum platforms.

Free Research Field

同位体工学、薄膜表面界面物性

Academic Significance and Societal Importance of the Research Achievements

水素プロセス挙動のハイスループット計測、高感度な水素検出が可能な質量分析標準、デバイス界面性能の室温評価装置など、同位体薄膜の界面制御に必要な計測技術として高い有用性を示す。半導体産業レベルで広く利用される局在水素による欠陥制御工学の学理構築と、シリコン同位体薄膜の量子計算基板の性能を引き上げる技術基盤として学術的および社会的に意義がある。