Development of Fundamental Technologies for Fabricating Nitride Semiconductor and Superconductor Hybrid Devices

2023 Fiscal Year Final Research Report

• Project/Area Number: 21H01827
• Research Category: Grant-in-Aid for Scientific Research (B)
• Allocation Type: Single-year Grants
• Section: 一般
• Review Section: Basic Section 30010:Crystal engineering-related
• Research Institution: Tokyo University of Science (2023); The University of Tokyo (2021-2022)
• Principal Investigator: Kobayashi Atsushi 東京理科大学, 先進工学部マテリアル創成工学科, 准教授 (20470114)
• Project Period (FY): 2021-04-01 – 2024-03-31
• Keywords: 窒化物半導体 / 窒化物超伝導体

Outline of Final Research Achievements

In this study, we developed a technology for epitaxial integration of nitride semiconductors and nitride superconductors. We focused on the structural characteristics of the interface between the nitride superconductor and semiconductor fabricated using the sputtering method, and successfully controlled the properties of the heterojunction.The epitaxial growth technology established in this study contributes to the development of novel quantum devices utilizing superconductor/semiconductor heterojunctions.

Free Research Field

結晶工学

Academic Significance and Societal Importance of the Research Achievements

窒化物半導体を基板とする薄膜成長法を採用することで、これまでに明らかにされてこなかったNbN薄膜の結晶構造と電気的特性を詳細に理解することできた。今回の研究成果は、窒化物半導体とNbN超伝導体薄膜を均質な状態でエピタキシャルに融合できる可能性を示すものであり、次世代超伝導・半導体融合デバイスの開発に向けた基盤技術となる。