Effective use of characteristics of Bi-based III-V compound semiconductors by controlling point defects density inside their crystals grown at low temperatures

2023 Fiscal Year Final Research Report

• Project/Area Number: 21H01829
• Research Category: Grant-in-Aid for Scientific Research (B)
• Allocation Type: Single-year Grants
• Section: 一般
• Review Section: Basic Section 30010:Crystal engineering-related
• Research Institution: Hiroshima University
• Principal Investigator: Tominaga Yoriko 広島大学, 先進理工系科学研究科(先), 准教授 (40634936)
• Co-Investigator(Kenkyū-buntansha): 上殿 明良 筑波大学, 数理物質系, 教授 (20213374) ; 石川 史太郎 北海道大学, 量子集積エレクトロニクス研究センター, 教授 (60456994)
• Project Period (FY): 2021-04-01 – 2024-03-31
• Keywords: Bi系III-V族半導体半金属混晶 / 分子線エピタキシー法 / 低温成長 / 結晶欠陥 / 陽電子消滅法

Outline of Final Research Achievements

Molecular beam epitaxial growth conditions have been optimized for low-temperature growth (LTG) of diluted Bi III-V compound semiconductors and their growth models were investigated. Various crystallinity evaluation methods have suggested the existence of both antisite and vacancy type point defects in the crystals of LTG diluted Bi III-V compound semiconductors. These results will lead to the development of photoconductive antennas for terahertz-wave emission and detection, which can be excited by a light source in the optical communication band. On the other hand, for the development of a new semiconductor laser for optical communication whose operating characteristics are independent on temperature, we have established a new fabrication method of stacked InAsBi quantum dots.

Free Research Field

結晶工学、応用物性、電子・電気材料工学

Academic Significance and Societal Importance of the Research Achievements

2030年に実用開始が目標に設定されている第6世代移動通信システム（6G）においては、従来よりも低消費電力や低コストを実現しながら、光通信全体の更なる大容量化やサブテラヘルツ帯以上の高周波帯域に対応した様々なデバイスが求められる。本研究が対象としているBi系III-V族半導体はこうした光通信・無線通信で求められる光学・テラヘルツ両デバイスに応用できる可能性を秘めており、本研究成果はデバイス開発に向けた結晶を得る指針を見出したものと位置付けることができる。