2023 Fiscal Year Final Research Report
Improvement of stability and life of radiation and high temperature tolerant vacuum electron devices by lowering of operating voltage
| Project/Area Number |
21H01860
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| Research Category |
Grant-in-Aid for Scientific Research (B)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Review Section |
Basic Section 31010:Nuclear engineering-related
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| Research Institution | Kyoto University |
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Principal Investigator |
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| Co-Investigator(Kenkyū-buntansha) |
長尾 昌善 国立研究開発法人産業技術総合研究所, エレクトロニクス・製造領域, 研究グループ長 (80357607)
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| Project Period (FY) |
2021-04-01 – 2024-03-31
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| Keywords | フィールドエミッタアレイ / 耐熱・耐放射線 / 電子デバイス / 窒素組成 / 仕事関数 |
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| Outline of Final Research Achievements |
Properties of the cathode material for field emitter arrays, which can be an electron device in radiation field or high temperature, was investigated. The nitrogen composition, crystallinity, electric resistivity, and hardness were evaluated for hafnium nitride thin films. The relationships between the nitrogen composition and the film properties were obtained. Fabrication process of the field emitter array with hafnium nitride was examined. Prior to the practical fabrication, insulating property of a three layer insulator was investigated. Field emitter arrays were practically fabricated, and the electron emission properties were investigated. Amplifiers and oscillators with field emitter arrays were investigated and examination of emission property measurements under radiation filed were performed in order to show the field emitter arrays as a practical radiation tolerant electron device.
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| Free Research Field |
真空ナノエレクトロニクス
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| Academic Significance and Societal Importance of the Research Achievements |
福島第一原子力発電所の廃炉作業などの放射線環境下で動作する可能性のある電子デバイスとして期待される電界放出型の電子源、すなわちフィールドエミッタアレイの性能向上に取り組んだ。陰極材料の窒化ハフニウムの窒素組成と膜物性の関係を明らかにしたことは学術的に価値が大きい。また、実施に窒化ハフニウムを陰極とするフィールドエミッタアレイを作製することができたこと、フィールドエミッタアレイを用いた増幅回路等の動作を確認したことは、今後本研究の耐放射線電子デバイス・回路実現への大きな一歩となる。
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