A Probing for Long-Term Operating Environment of IoT Devices using Multi-Output MOSFET

2023 Fiscal Year Final Research Report

• Project/Area Number: 21K04091
• Research Category: Grant-in-Aid for Scientific Research (C)
• Allocation Type: Multi-year Fund
• Section: 一般
• Review Section: Basic Section 21030:Measurement engineering-related
• Research Institution: Yamagata University
• Principal Investigator: Harada Tomochika 山形大学, 大学院理工学研究科, 助教 (50375317)
• Project Period (FY): 2021-04-01 – 2024-03-31
• Keywords: 多端子MOSFET / 貫通電流・充放電電流 / 磁界検出 / MOSFET型センサー / 回路動作検出デバイス

Outline of Final Research Achievements

The purpose of this research is to develop a probing method to detect degradation of sensor and circuit performance by continuously monitoring the environment of the integrated circuit while operating the circuit, using a multi-terminal MOSFET device that can operate in parallel with circuit and sensing operations, based on transistors. The objective of this project is to develop a probing method to detect degradation of sensor and circuit performance by continuously monitoring the environment of the integrated circuit while the circuit is operating.
As a result, I found that it is possible to perform current detection and magnetic field detection in the MOSFET device developed in this study. I also applied this device to a digital circuit and verified its static and dynamic characteristics, and found that it is possible to observe circuit operation indirectly using only the device in this study, without using a direct current probe.

Free Research Field

知能集積回路、集積化センサ、IoT/ICTデバイス・システム

Academic Significance and Societal Importance of the Research Achievements

本研究では、いままで培った低電圧動作可能なトランジスタをベースとし、回路動作とセンシング動作を並行して動作可能な多端子MOSFET素子を用い、回路動作をしながら集積回路の環境に置かれた環境をモニタし続けることでセンサや回路動作の性能低下等を察知するプロービング手法を開発することを目的とする。ディジタル回路を例に多端子MOSFETを回路に適用することで間接的に回路動作の「その場」観察が可能であることを見出した。これは、今後センサ素子を含めたIoTシステムの安定的な長期駆動の確保、特に、外界の環境は寒暖差や湿度等、非常に過酷な環境下に対するシステムの常時監視用デバイスとして貢献できる。