2023 Fiscal Year Final Research Report
Study on the origin of nanowire growth utilizing on-terrace graphoepitaxy method
| Project/Area Number |
21K04144
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| Research Category |
Grant-in-Aid for Scientific Research (C)
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| Allocation Type | Multi-year Fund |
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| Section | 一般 |
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| Review Section |
Basic Section 21050:Electric and electronic materials-related
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| Research Institution | Osaka Institute of Technology |
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Principal Investigator |
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| Co-Investigator(Kenkyū-buntansha) |
熊代 良太郎 東北大学, 材料科学高等研究所, 特任准教授 (00396417)
良知 健 地方独立行政法人神奈川県立産業技術総合研究所, 機械・材料技術部, 主任研究員 (70521037)
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| Project Period (FY) |
2021-04-01 – 2024-03-31
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| Keywords | ナノワイヤ / 有機薄膜成長 / 斜入射X線回折 / 分子動力学シミュレーション / 初期形成過程 / ナノ構造評価 / チエノチオフェン |
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| Outline of Final Research Achievements |
This study aims to establish a fabrication technique for organic semiconductor nanowires (NWs) with size controllability and enabling the construction of array structures on substrates.
This research was promoted with the aim of establishing NW fabrication technology for a wide variety of molecular systems with different p-type, n-type and HOMO-LUMO levels. The formation process of organic semiconducting NWs was experimentally investigated and molecular dynamics simulations were applied to clarify the crystal growth process of molecular solids and its control guidelines. In addition, the basic parameters of the organic semiconducting NW device fabrication technology were determined and a growth model was constructed in order to evaluate device properties such as transistor and emission properties of uniform organic semiconducting NWs arrayed on the fabricated substrate.
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| Free Research Field |
有機薄膜成長
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| Academic Significance and Societal Importance of the Research Achievements |
本研究において分子動力学シミュレーションを適応する事により、分子性固体の結晶成長過程とその制御指針を明らかにした。有機半導体デバイス作製技術の基礎パラメータの決定と成長モデルを構築した．その結果，有機半導体NWの形成はこれまで考えられたいた以上に，多くの制御パラメータが存在することが明らかとなった．有機半導体デバイス作製において重要な，高い電界効果移動度を示すチエノチオフェン系材料の初期過程を明快に解明したことは特筆に値し，今後の高移動度を示す有機FET作製に有益な基礎知見を提供した．また，MDシミュレーションと組み合わせた薄膜成長のシミュレーション技術も構築した．
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