Study on the effect of point defects on the high mobility in transparent conductive films and its control by photo irradiation

2023 Fiscal Year Final Research Report

• Project/Area Number: 21K04148
• Research Category: Grant-in-Aid for Scientific Research (C)
• Allocation Type: Multi-year Fund
• Section: 一般
• Review Section: Basic Section 21050:Electric and electronic materials-related
• Research Institution: National Institute of Advanced Industrial Science and Technology
• Principal Investigator: Junichi NOMOTO 国立研究開発法人産業技術総合研究所, エレクトロニクス・製造領域, 主任研究員 (30711288)
• Project Period (FY): 2021-04-01 – 2024-03-31
• Keywords: 透明導電膜 / 固相結晶化 / 光反応 / キャリア輸送

Outline of Final Research Achievements

Owing to their extremely high carrier mobility of >100 cm2/Vs and suitable low carrier concentrations, transparent conducting films of solid-phase crystallized H-doped In2O3 exhibit high conductivity with high optical transparency over a broad frequency range. These properties can be attributed to the solid-phase crystallization of the amorphous precursor film by thermal annealing at a temperature higher than 150- 200 degC. Such a high processing temperature, however, limits the formation and adoption of these films on heat-sensitive flexible substrates such as polyethylene terephthalate (PET), whose process temperature is less than 70 - 110 degC. To resolve this temperature issue, we used excimer laser irradiation technique, and optimized the irradiation and precursor deposition conditions. In this work, we successfully obtained the highest mobility of 133 cm2/Vs among reported flexible transparent conducting oxide films.

Free Research Field

透明導電酸化物

Academic Significance and Societal Importance of the Research Achievements

実現したフレキシブル高移動度透明導電フィルムは、高い導電性と可視から近赤外線帯域までの広い波長帯域で高い透明性を両立した。これらの特性は、近赤外光を発電やセンシングに利用するフレキシブル次世代太陽電池やセンサーの性能向上に大きく貢献する。