Development of switchable spintronics device based on the change in the magnetic exchange interaction by hydrogen gas

2023 Fiscal Year Final Research Report

• Project/Area Number: 21K04152
• Research Category: Grant-in-Aid for Scientific Research (C)
• Allocation Type: Multi-year Fund
• Section: 一般
• Review Section: Basic Section 21050:Electric and electronic materials-related
• Research Institution: University of Toyama
• Principal Investigator: Akamaru Satoshi 富山大学, 学術研究部理学系, 助教 (10420324)
• Project Period (FY): 2021-04-01 – 2024-03-31
• Keywords: 磁性多層膜 / 水素 / 磁気抵抗 / 水素化物

Outline of Final Research Achievements

The magnetic multilayer using nonmagnetic hydrogen absorbing metal was constructed and its magnetoresistance under various nitrogen and hydrogen gas mixture were investigated. The Fe/V multilayer with V thickness of 1.8 nm showed a giant magnetoresistance under the nitrogen atmosphere, while the giant magnetoresistance decreased with increasing hydrogen concentration in nitrogen atmosphere. The Fe/V multilayer with V thickness of 2.4 nm under nitrogen atmosphere did not show the giant magnetoresistance, which appeared under hydrogen concentration above 0.2%. It was concluded that this behavior was related to the difference in the electronic structure between V metal and V hydride.

Free Research Field

材料科学

Academic Significance and Societal Importance of the Research Achievements

磁性多層膜への水素導入による物性制御は、水素センサや水素によるスイッチングの素子としての利用が期待できる。しかし、これまで水素吸蔵合金の電磁気特性や水素吸収放出を利用したデバイス構築といった研究報告例は少ない。水素吸収と物性変化の相関関係とその原因を調べることは水素吸蔵合金の学理を追求するのに重要であり、また上記したセンサやスイッチング阻止の開発につながると考えている。