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2023 Fiscal Year Final Research Report

Development of Antiferromagnetic-Ferromagnetic Phase Transition by an Electric Field Application and Non-Volatile Magnetic Memory Application

Research Project

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Project/Area Number 21K04159
Research Category

Grant-in-Aid for Scientific Research (C)

Allocation TypeMulti-year Fund
Section一般
Review Section Basic Section 21050:Electric and electronic materials-related
Research InstitutionNihon University

Principal Investigator

IWATA Nobuyuki  日本大学, 理工学部, 教授 (20328686)

Co-Investigator(Kenkyū-buntansha) 高瀬 浩一  日本大学, 理工学部, 教授 (10297781)
清水 智弘  関西大学, システム理工学部, 教授 (80581165)
Project Period (FY) 2021-04-01 – 2024-03-31
KeywordsCaFeO3 / LaFeO3 / パルスレーザー堆積法 / 電界印加型不揮発性磁気メモリ / 非極性/極性界面 / 基板表面処理の最適化
Outline of Final Research Achievements

Two dimensional island growth was observed in CFO film for 30 min deposition. The LFO film showed triangle grains and two dimensional step-terraces structure between the grains. The thickness of the LFO was 66 units. The thickness of CFO3 was and CFO was 3.8 units and 45 units. Two dimensional layer growth was observed in LFO/CFO multilayer. Scanning probe microscopy showed 0.4 nm step height, which is corresponding to the unit step of LFO. Fitting XRR spectrum, CFO3, CFO2.5 and LFO grew with thickness of 2.6, 0.71 and 25 units. The CFO less than 1 units was successfully obtained.

Free Research Field

電界印加による磁気特性制御

Academic Significance and Societal Importance of the Research Achievements

CFO3/LFO積層膜が開発中の様々な次世代メモリと比較して、動作原理・消費電力・集積密度・耐久性すべてにおいて飛躍的に性能が優れた不揮発性メモリとなることを早期に予期して研究に着手した。積層膜という単純な構造「積層膜界面を介して電子移動」「電流では無く結晶内で数Åだけ電子を移動」させるだけで磁気秩序を相転移させることができ、メモリ応用に結びつけたアイディアは、学術的意義が高く、極めてオリジナリティも高い。本研究では、実際にCFO3/LFOを作製し、反強磁性-強磁性相転移が起こるであろう積層構造を作製した点において学術的・社会的意義が高いといえる。

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Published: 2025-01-30  

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