Development of gallium oxide high electron mobility transistors on Si substrates

2023 Fiscal Year Final Research Report

• Project/Area Number: 21K04204
• Research Category: Grant-in-Aid for Scientific Research (C)
• Allocation Type: Multi-year Fund
• Section: 一般
• Review Section: Basic Section 21060:Electron device and electronic equipment-related
• Research Institution: Osaka Institute of Technology
• Principal Investigator: Koyama Masatoshi 大阪工業大学, 工学部, 准教授 (30758636)
• Project Period (FY): 2021-04-01 – 2024-03-31
• Keywords: 酸化ガリウム / Ga2O3 / ミストCVD / 3C-SiC / 分極 / HEMT

Outline of Final Research Achievements

In this study, we targeted to develop high electron mobility transistors using the polarization charges of κ-Ga2O3, which has spontaneous polarization due to its crystal structure. A basic study on the deposition of κ-Ga2O3 on 3C-SiC (111) deposited on Si (111) substrates by metal-organic vapor deposition was carried out using fine-channel mist chemical vapor deposition. The flat thin film deposition conditions necessary to realize κ-Ga2O3 HEMT were explored, and it was found that flat κ-Ga2O3 thin films could be deposited on 3C-SiC by improving the deposition equipment to suppress particles generated during deposition, optimizing the concentration of the precursor solution and mist supply rate.

Free Research Field

半導体工学

Academic Significance and Societal Importance of the Research Achievements

研究期間全体を通して、最終目標であるGa2O3 HEMT の試作までは至らなかったが、Si基板上にorthorhombic 構造のκ-Ga2O3 薄膜を成長するためのバッファ層として3C-SiCが有用であること、また、3C-SiC上にκ-Ga2O3 薄膜を成膜するための有用な知見が得られた。