2023 Fiscal Year Final Research Report
Development of gallium oxide high electron mobility transistors on Si substrates
Project/Area Number |
21K04204
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Research Category |
Grant-in-Aid for Scientific Research (C)
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Allocation Type | Multi-year Fund |
Section | 一般 |
Review Section |
Basic Section 21060:Electron device and electronic equipment-related
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Research Institution | Osaka Institute of Technology |
Principal Investigator |
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Project Period (FY) |
2021-04-01 – 2024-03-31
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Keywords | 酸化ガリウム / Ga2O3 / ミストCVD / 3C-SiC / 分極 / HEMT |
Outline of Final Research Achievements |
In this study, we targeted to develop high electron mobility transistors using the polarization charges of κ-Ga2O3, which has spontaneous polarization due to its crystal structure. A basic study on the deposition of κ-Ga2O3 on 3C-SiC (111) deposited on Si (111) substrates by metal-organic vapor deposition was carried out using fine-channel mist chemical vapor deposition. The flat thin film deposition conditions necessary to realize κ-Ga2O3 HEMT were explored, and it was found that flat κ-Ga2O3 thin films could be deposited on 3C-SiC by improving the deposition equipment to suppress particles generated during deposition, optimizing the concentration of the precursor solution and mist supply rate.
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Free Research Field |
半導体工学
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Academic Significance and Societal Importance of the Research Achievements |
研究期間全体を通して、最終目標であるGa2O3 HEMT の試作までは至らなかったが、Si基板上にorthorhombic 構造のκ-Ga2O3 薄膜を成長するためのバッファ層として3C-SiCが有用であること、また、3C-SiC上にκ-Ga2O3 薄膜を成膜するための有用な知見が得られた。
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