Fabrication of current-injected circularly polarized light emitting devices with near-infrared light emission based on electric-field-induced pn junctions

2023 Fiscal Year Final Research Report

• Project/Area Number: 21K04812
• Research Category: Grant-in-Aid for Scientific Research (C)
• Allocation Type: Multi-year Fund
• Section: 一般
• Review Section: Basic Section 28010:Nanometer-scale chemistry-related
• Research Institution: Tokyo City University
• Principal Investigator: Yusuke Hoshi 東京都市大学, 理工学部, 准教授 (70748962)
• Co-Investigator(Kenkyū-buntansha): 石川 亮佑 東京都市大学, 理工学部, 教授 (50637064)
• Project Period (FY): 2021-04-01 – 2024-03-31
• Keywords: 原子層 / 電流注入型発光素子 / 近赤外光

Outline of Final Research Achievements

In this study, current-injected light emitting devices with near-infrared light emission was developed by using a local electric field control technique in heterostructures, which consist of atomically thin layered materials. First, we developed a technique to form large area molybdenum ditelluride (MoTe2), which acts as the active layer in the light emitting device, by using several layer MoTe2 by chemical vapor deposition and single layer MoTe2 by the gold mediated exfoliation. In addition, it has been shown that electroluminescent devices can be fabricated using a local electric field control technique with MoTe2. This method was found to be effective for the development of valley photonics devices using two dimensional materials.

Free Research Field

ナノ構造化学

Academic Significance and Societal Importance of the Research Achievements

電流注入型発光素子を開発する場合、３次元的な結晶構造からなる半導体では結晶中に不純物をドーピングしPN接合を形成する必要がある。本研究では、局所電場制御技術を利用することで二次元半導体中の任意の領域においてキャリア密度を変調することに成功しており、これにより不純物ドーピングせずにMoTe2を発光層とした電流注入型発光素子作製に成功している。本研究で確立した手法は、バレー自由度に由来した基礎物性調査やオプトエレクトロニクス素子開発への基盤技術となる。