2023 Fiscal Year Final Research Report
Modeling and application of phase transition VO2 devices for high speed modulation of Terahertz wave
| Project/Area Number |
21K04868
|
|---|
| Research Category |
Grant-in-Aid for Scientific Research (C)
|
| Allocation Type | Multi-year Fund |
|---|
| Section | 一般 |
|---|
| Review Section |
Basic Section 29010:Applied physical properties-related
|
|---|
| Research Institution | Tokai University |
|---|
Principal Investigator |
|
|---|
| Co-Investigator(Kenkyū-buntansha) |
中西 俊博 京都大学, 工学研究科, 講師 (30362461)
|
|---|
| Project Period (FY) |
2021-04-01 – 2024-03-31
|
| Keywords | テラヘルツ波 / 光学透過制御 / メタ表面 / 相転移酸化物 / 二酸化バナジウム薄膜 / 電圧印加スイッチング / 自励発振現象 / プレーナ型素子 |
|---|
| Outline of Final Research Achievements |
Vanadium dioxide (VO2) shows insulator metal transition (IMT) with resistance change over three orders magnitudes at around 68°C. The IMT is also triggered by voltage addition. Under proper series resistance to the VO2 film with facing electrodes, self-sustaining oscillation phenomenon is obtained. In this project, we aim to apply this self-oscillation to control of terahertz-wave transmission. We fabricated planar devise in which Ti (10 nm)/Au (200 nm) electrodes were deposited on 100 nm-thick VO2 film grown on sapphire substrate. Distance between the electrodes and the width were 10 um and 5000 um, respectively. With voltage addition to this device, we observed voltage triggered switching at 11 V, 8 mA. In addition, self-oscillation phenomenon was realized with 50 Hz sinusoidal wave voltage addition. We clarified dependence of oscillation frequency on parallel capacitance values. Finally, we obtained oscillation frequency higher than 100 kHz.
|
| Free Research Field |
電子材料薄膜作製と物性評価
|
| Academic Significance and Societal Importance of the Research Achievements |
光と電波の中間的な周波数帯のテラヘルツ波は、次世代の携帯電話や医療用途への応用が期待されており、その波源開発や透過制御の研究が重要性を増している。テラヘルツ波は金属メタ表面によりその透過を制御できるが、絶縁体－金属転移を発現する二酸化バナジウム(VO2)薄膜をメータ表面へ適用すれば透過性をアクティブに制御できる。本研究ではVO2薄膜において温度上昇による絶縁体―金属転移スイッチングを発現させることでテラヘルツ波の透過制御に成功した成果を踏まえて、更にVO2の電圧印加スイッチング及び自励発振現象をメタ表面へと組み込むことができればテラヘルツ波の高速な透過制御が可能となる点に着目した研究である。
|
