Thermal Management of Ru and Graphene Interconnects in Next-Generation Logic Semiconductors

2023 Fiscal Year Final Research Report

• Project/Area Number: 21K04886
• Research Category: Grant-in-Aid for Scientific Research (C)
• Allocation Type: Multi-year Fund
• Section: 一般
• Review Section: Basic Section 29020:Thin film/surface and interfacial physical properties-related
• Research Institution: Toyo University
• Principal Investigator: Zhan Tianzhuo 東洋大学, 学際・融合科学研究科, 准教授 (00803389)
• Project Period (FY): 2021-04-01 – 2024-03-31
• Keywords: 配線 / 界面熱抵抗 / ルテニウム

Outline of Final Research Achievements

Effects of thermal boundary resistance (TBR) on the thermal management of ruthenium interconnects, which are promising candidates as next-generation logic semiconductor interconnect materials,were investigated. Various wire/interlayer/dielectric film stack structures with different interfacial properties were prepared using sputtering method. The TBRs of the stack structures were measured using the frequency-domain thermoreflectance method. A TEM instrument equipped with an energy-dispersive X-ray spectrometer was employed to image the cross-sectional structures and elemental mapping. Hard X-ray photoelectron spectroscopy was used to investigate the bonding states of deeply buried interfaces in the film stacks. The temperature rise of next-generation logic semiconductor interconnects was calculated using finite element method simulations, with the measured TBR as a significant parameter.

Free Research Field

薄膜、表面界面物性

Academic Significance and Societal Importance of the Research Achievements

本研究は、界面熱輸送に関わる理解を深め、界面熱抵抗を制御することでロジック半導体の熱マネジメント技術革新をもたらすと期待される。また、半導体デバイス、伝熱工学、界面化学などの様々な分野に関わる学問と技術の融合を推進すると期待される。本研究によって推進されるロジック半導体の熱マネジメント技術の実利用と普及をできれば、ロジック半導体の更なる高性能化及び低消費電力化を実現でき、情報爆発時代において半導体デバイスの消費電力を大幅に削減し、省エネ、低炭素化社会に貢献すると期待される。