Band-edge engineering and property control in wide band-gap sulfide semiconductors

2023 Fiscal Year Final Research Report

• Project/Area Number: 21K04906
• Research Category: Grant-in-Aid for Scientific Research (C)
• Allocation Type: Multi-year Fund
• Section: 一般
• Review Section: Basic Section 30010:Crystal engineering-related
• Research Institution: Tottori University
• Principal Investigator: Ichino Kunio 鳥取大学, 工学研究科, 教授 (90263483)
• Co-Investigator(Kenkyū-buntansha): 阿部 友紀 鳥取大学, 工学研究科, 准教授 (20294340)
• Project Period (FY): 2021-04-01 – 2024-03-31
• Keywords: 硫化物半導体 / ワイドバンドギャップ / 電気伝導性 / 光学的特性

Outline of Final Research Achievements

Novel Wide band-gap semiconductors, specifically ZnMgSTe semiconductors which are based on a sulfide semiconductor ZnS have been investigated, aiming at property control by changing the valence-band edge energy. In particular, the control of the conduction properties has been studied to achieve p-type conduction, which has been recognized to be difficult. In addition, the condition where p-type conduction is compatible with a wide band gap has been studied. Moreover, characterizations of optical properties of ZnMgSTe have shown the feasibility as green emission material.

Free Research Field

半導体工学

Academic Significance and Societal Importance of the Research Achievements

本研究は，新規ワイドバンドギャップ半導体に関する基礎的な研究であり，その将来的な応用に向けて従来困難であった物性の実現を目指すにあたり，新たな観点を提案しその可能性を実験的に示したものである．また，同時に当該半導体の新たな緑色発光材料としての可能性も示すことができた．これらのことは，現在の半導体の研究分野の進展に寄与し，また将来的に半導体の応用分野のさらなる発展に寄与するものと考えられる．