2023 Fiscal Year Final Research Report
Electrical manipulation of Antiferromagnetic State in Non-centrosymmetric Systems
| Project/Area Number |
21K13873
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| Research Category |
Grant-in-Aid for Early-Career Scientists
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| Allocation Type | Multi-year Fund |
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| Review Section |
Basic Section 13030:Magnetism, superconductivity and strongly correlated systems-related
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| Research Institution | The University of Tokyo (2023)
Institute of Physical and Chemical Research (2021-2022) |
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Principal Investigator |
NGUYEN KHANH 東京大学, 大学院工学系研究科(工学部), 特任助教 (50775608)
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| Project Period (FY) |
2021-04-01 – 2024-03-31
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| Keywords | Antiferromagnet / Symmetry Breaking / Nonreciprocal transport / Data Storage |
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| Outline of Final Research Achievements |
In this work, via investigation of antiferromagnetic structure with broken time reversal symmetry in intercalated vdW material CoNb3S6 and CoTa3S6, we would like to demonstrate a new paradigm to identify-“read” and control-“write” the antiferromagnetic states. The main achievements of this project can be summarized as: (i) Elucidation of the all-in all-out type non-coplanar antiferromagnetic structure of CoNb3S6; (ii) Investigation of topological transport phenomena, including topological Hall and Nernst effects, associated with fictitious field generated from non-trivial Berry curvature; (iii) observation of non-reciprocal electrical transport - “diode” effect and (iv) demonstration of switching the antiferromagnetic states by DC electric current. These results contribute to establish a foundation for further exploration new property of this intriguing class of antiferromagnetic materials with broken time reversal symmetry.
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| Free Research Field |
Magnetism
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| Academic Significance and Societal Importance of the Research Achievements |
The insights gained from this research could drive innovations in information technology, particularly in the fields of data storage and processing. Spintronic devices based on AFM materials promise higher speeds and lower energy consumption compared to traditional electronic devices.
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