Semiconductor device of graphitic carbon nitride film

2023 Fiscal Year Final Research Report

• Project/Area Number: 21K14194
• Research Category: Grant-in-Aid for Early-Career Scientists
• Allocation Type: Multi-year Fund
• Review Section: Basic Section 21050:Electric and electronic materials-related
• Research Institution: Shinshu University
• Principal Investigator: Urakami Noriyuki 信州大学, 学術研究院工学系, 助教 (80758946)
• Project Period (FY): 2021-04-01 – 2024-03-31
• Keywords: 窒化炭素 / 半導体 / ダイオード / 電界効果

Outline of Final Research Achievements

Metal-free and/or non-toxic electronic materials have received considerable attention in term of element strategy. Layered carbon nitride is a functional material with semiconducting properties. Although its charge transport properties have been understood, it has not yet reached the technological hierarchy for deployment in electronic devices. In this study, electronic devices based on the charge transport properties of layered carbon nitride were demonstrated. A diode was fabricated utilizing the out-of-plane transport property and the interface control between metal and semiconductor. The charge transport along the in-plane direction was controlled, and a field-effect device was also fabricated with a normally off switching. These results are suggested that basic knowledges of layered carbon nitride toward to applications of electronic devices.

Free Research Field

電気電子材料工学

Academic Significance and Societal Importance of the Research Achievements

層状物質からなる二次元材料は、次々世代における電気電子素子の材料として有望であり精力的に研究が行われている。本研究で見出した窒化炭素によるノーマリーオフ動作は、材料固有の性質を利用した新たな動作原理を示す電気電子素子の創製に繋がると考えらえる。ま単純な素子構造によりノーマリーオフ動作が可能であることから、二次元材料からなる電解効果トランジスタや物理/化学センサの低消費電力化が実現可能になる可能性を秘めている。