2023 Fiscal Year Final Research Report
Large-scale conductivity modulation control in gallium nitride using freestanding substrates with ultra-low resistivity and low dislocation density
| Project/Area Number |
21K14210
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| Research Category |
Grant-in-Aid for Early-Career Scientists
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| Allocation Type | Multi-year Fund |
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| Review Section |
Basic Section 21060:Electron device and electronic equipment-related
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| Research Institution | Osaka University |
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Principal Investigator |
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| Project Period (FY) |
2021-04-01 – 2024-03-31
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| Keywords | GaN / 伝導度変調 / pn接合ダイオード / パワーデバイス / OVPE法 |
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| Outline of Final Research Achievements |
We fabricated a PN junction diode on a high carrier concentration GaN substrate grown by oxide vapor phase epitaxy (OVPE) and investigated the effect of the substrate carrier concentration on the conductivity modulation in GaN. When we performed an evaluation after eliminating the effect of self-heating by pulse IV measurement, we found that the increase in the substrate carrier concentration promoted the conductivity modulation and reduced the resistance of the drift layer to about half that of devices on normal GaN substrates.
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| Free Research Field |
結晶工学および電子デバイス
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| Academic Significance and Societal Importance of the Research Achievements |
本研究は高キャリア濃度基板を用いれば直接遷移半導体であるGaNにおいても伝導度変調によるオン抵抗の低減効果を増大させられること，適用耐圧範囲を拡張できることを示した．直接遷移半導体においても伝導度変調を積極的に利用可能な高耐圧デバイスが作製可能となれば，従来トレードオフとなっていた導通損失とスイッチング損失の両方を低減可能な高効率スイッチング素子を実現できる．当該技術は省エネルギー社会実現に貢献できる．
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