2021 Fiscal Year Research-status Report
Investigation of the efficiency of spin-orbit torque induced magnetization switching in Functional oxide/ ferromagnetic stack films for a new In-memory computing
| Project/Area Number |
21K14522
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| Research Institution | Tohoku University |
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Principal Investigator |
NGUYEN THIVANANH 東北大学, 先端スピントロニクス研究開発センター, 助教 (20840101)
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| Project Period (FY) |
2021-04-01 – 2023-03-31
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| Keywords | spintronics / magnetization dynamics / Functional oxides / RuO2 / antiferromagnetic / Hall measurement / ferromagnetic resonance |
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| Outline of Annual Research Achievements |
We have investigated the magnetization switching induced by spin-orbit torque (SOT) in the Functional oxide/CoFeB system. The crystallinity was optimized by the amount of oxygen gas pressure in the sputtering process which was confirmed by the XRD and RHEED measurements. The optimized condition for the preparation of the functional oxide thin film enabled the current-induced magnetization switching in the in-plane anisotropy CoFeB film, which was confirmed by using the harmonic Hall measurement. The results showed that the SOT- induced magnetization switching was realized thanks to the oxidation of functional oxide. These achievements would open a route for the further investigations of the high SOT efficiency toward the application in oxide-based spintronics.
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| Current Status of Research Progress |
Current Status of Research Progress
2: Research has progressed on the whole more than it was originally planned.
Reason
The achievements here are on the progress of investigation of the SOT-induced magnetization switching in the Functional Oxide/Ferromagnetic (FO/FM) system. Since the fabrication of the FO layer using the sputter system usually needs effort, we have focused on the control of the crystallinity of the FO layer by optimizing the fabrication process (oxygen gas, substrate temperature, annealing process), and by taking the advantages of the crystallinity of the substrates (Si, c-Al2O3 and TiO2 substrates). The optimization of stacking structure was also done for FO/FM systems for the investigation of their dynamic magnetic properties and the magnetization switching in the FO/CoFeB systems under different oxygen incorporation levels.
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| Strategy for Future Research Activity |
For the next plans, we focus on the following research topics:
1. Investigation of the dynamics magnetic properties in the Functional oxide/ferromagnetic (RuO2/CoFeB) system with various conditions such as the change in the crystal anisotropy, layer thickness, deposition condition.
2. The SOT induced magnetization reversal under various conditions such as the crystal structure, and/or the electric field, and/or the electromagnetic field.
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