2022 Fiscal Year Final Research Report
Investigation of the efficiency of spin-orbit torque induced magnetization switching in Functional oxide/ ferromagnetic stack films for a new In-memory computing
| Project/Area Number |
21K14522
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| Research Category |
Grant-in-Aid for Early-Career Scientists
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| Allocation Type | Multi-year Fund |
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| Review Section |
Basic Section 29010:Applied physical properties-related
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| Research Institution | Tohoku University |
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Principal Investigator |
Nguyen Thi Van Anh 東北大学, 先端スピントロニクス研究開発センター, 助教 (20840101)
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| Project Period (FY) |
2021-04-01 – 2023-03-31
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| Keywords | Spin orbit torque / Spin split effect / Spin Hall effect / Antiferromagnetic / SOT-MRAM / RuO2 / Functional oxides / RuO2/FM bilayer |
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| Outline of Final Research Achievements |
In this study, spin-orbit torque (SOT) induced magnetization switching in Functional oxide/ ferromagnetic (FO/FM) stack films has been investigated with the realization of new functionality towards the novel spintronic devices application.
The RuO2 thin film was fabricated with well-controlled crystallinity, surface, and resistivity. The spin current was generated in the RuO2 thin film with well-understood polarity, which was then used to induce the magnetization switching of the FM layer placing adjacent to the RuO2 layer. The effective SOT fields in RuO2/FM stack film have been investigated using harmonic Hall measurement and the origin for these SOT fields was attributed mainly to the spin-split effect by considering the spin Hall conductivity tensor under the symmetry analysis for the RuO2 crystal structure. This research is important for the further research on the current-induced magnetization switching using functional oxides.
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| Free Research Field |
応用物理工学
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| Academic Significance and Societal Importance of the Research Achievements |
This research fulfilled the lack of investigation of the SOT-induced magnetization switching under the spin-split origin in RuO2/FM bilayer by a well-controlled crystallinity of RuO2 and a thoughtful combination of experiment and calculation. This also open a new switching mechanism for SOT devices.
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