Demonstration of low power consumption memory device using electric field induced magnetization reversal

2022 Fiscal Year Final Research Report

• Project/Area Number: 21K18891
• Research Category: Grant-in-Aid for Challenging Research (Exploratory)
• Allocation Type: Multi-year Fund
• Review Section: Medium-sized Section 29:Applied condensed matter physics and related fields
• Research Institution: Tokyo Institute of Technology
• Principal Investigator: Azuma Masaki 東京工業大学, 科学技術創成研究院, 教授 (40273510)
• Co-Investigator(Kenkyū-buntansha): 金子 智 地方独立行政法人神奈川県立産業技術総合研究所, 電子技術部, グループリーダー (40426359) ; 重松 圭 東京工業大学, 科学技術創成研究院, 助教 (40754578)
• Project Period (FY): 2021-07-09 – 2023-03-31
• Keywords: 強磁性強誘電体 / 電場印加磁化反転 / ナノドット / 磁気センサー

Outline of Final Research Achievements

BiFe0.9Co0.1O3 (BFCO) has spontaneous magnetization perpendicular to electric polarization and magnetization reversal upon polarization reversal by electric field, which is expected to be applied to ultra-low power consumption memory with electric field write magnetic readout. Single-domain nanodots were successfully fabricated by deposition using anodized porous alumina as a mask. InSb, which acts as a Hall sensor, was deposited on the BFCO thin film, and it was confirmed that the reversal of an external magnetic field of 1 Oe can be detected.

Free Research Field

固体化学、材料科学

Academic Significance and Societal Importance of the Research Achievements

BiFe0.9Co0.1O3の強誘電・強磁性シングルドメイン化に必要なサイズを明らかにしたこと、さらにInSbが磁化反転検出のセンサーとして用いられる事を確認したことで、電場書き込み磁気読み出しの超低消費電力メモリ応用への道筋が明らかになった。学術的にも社会的にも意義深い成果で、研究を継続する必要がある。