2022 Fiscal Year Final Research Report
Investigation of growth dynamics of faceted grain/grain/melt grain boundary junction during directional solidification of Si
Project/Area Number |
21K20343
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Research Category |
Grant-in-Aid for Research Activity Start-up
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Allocation Type | Multi-year Fund |
Review Section |
0202:Condensed matter physics, plasma science, nuclear engineering, earth resources engineering, energy engineering, and related fields
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Research Institution | Tohoku University |
Principal Investigator |
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Project Period (FY) |
2021-08-30 – 2023-03-31
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Keywords | Crystal growth / In situ observation / Silicon / Grain boundary / Solid/melt interface |
Outline of Final Research Achievements |
Experimental methods have been established for studying growth behavior of grain boundaries (GBs). Symmetric Σ9 GBs with large deviation, that means high interfacial energy, were found developing interfacial grooves during solidification. Whereas perfect Σ9 GBs did not develop groove at interface.
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Free Research Field |
Crystal growth
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Academic Significance and Societal Importance of the Research Achievements |
Findings of this research contribute to the knowledge of interfacial morphology and kinetics of growing grain boundaries, which are the major defect determining the properties of multicrystalline materials. Most of the materials in our daily life are multicrystalline.
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