2022 Fiscal Year Final Research Report
Exploring novel graphene/ferrimagnetic Heusler alloy heterostructures for spin-photonic applications
| Project/Area Number |
21K20508
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| Research Category |
Grant-in-Aid for Research Activity Start-up
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| Allocation Type | Multi-year Fund |
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| Review Section |
0402:Nano/micro science, applied condensed matter physics, applied physics and engineering, and related fields
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| Research Institution | National Institutes for Quantum Science and Technology |
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Principal Investigator |
BENTLEY PHILLIP DAVID 国立研究開発法人量子科学技術研究開発機構, 高崎量子応用研究所 量子機能創製研究センター, 博士研究員 (40906260)
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| Project Period (FY) |
2021-08-30 – 2023-03-31
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| Keywords | Heusler Compound / Ferrimagnetism / PMA / Half-metallicity / MRAM |
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| Outline of Final Research Achievements |
I explored and developed a novel cubic phase of the ferrimagnetic Heusler compound Mn2FeGa (MFG) with the ultimate aim of coupling this material with 2D materials such as graphene for spin photonic applications. This newly developed material shows several favourable properties for spintronic applications including: significant perpendicular magnetic anisotropy (PMA), high chemical ordering, and high spin polarization. These properties demonstrate a material suitable for spintronic applications such as magnetic random-access memory (MRAM). These results have led to a publication which is currently under review, receiving positive feedback and is soon to be published. Furthermore, these results have led to a patent for cubic MFG/Cr/MgO buffer layers which is currently in press. Finally, these results have been presented at several national conferences and have attracted significant attention among the spintronics community.
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| Free Research Field |
spintronics
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| Academic Significance and Societal Importance of the Research Achievements |
Cubic MFG extraordinary magnetic properties such as its large PMA and high spin polarization make it a very suitable candidate for spintronic application such as MRAM. This will help us overcome current limits on magnetic memory and MFG is likely to be a leading material in next-generation memory.
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