2022 Fiscal Year Final Research Report
Realizing of non-volatile memory with large capacity and low power consumption by metal-insulator-semiconductor junction composed by phase change material and oxide
Project/Area Number |
21K20509
|
Research Category |
Grant-in-Aid for Research Activity Start-up
|
Allocation Type | Multi-year Fund |
Review Section |
0402:Nano/micro science, applied condensed matter physics, applied physics and engineering, and related fields
|
Research Institution | National Institute of Advanced Industrial Science and Technology |
Principal Investigator |
Hatayama Shogo 国立研究開発法人産業技術総合研究所, エレクトロニクス・製造領域, 産総研特別研究員 (50910501)
|
Project Period (FY) |
2021-08-30 – 2023-03-31
|
Keywords | 相変化材料 / 非線形性 / 不揮発性メモリ / Ge-Sb-Te / 金属-絶縁体-酸化物接合 |
Outline of Final Research Achievements |
Nonvolatile memory using Ge-Sb-Te compounds (GST), which are widely used as phase-change materials, generally requires a selector layer (thickness: several tens of nm) that exhibits nonlinearity, which is a factor that hinders high device integration. In this study, we succeeded in realizing a selector-free device structure by utilizing the high resistance nature of insulator oxides and tunneling current. In this structure, the nonlinearity of the MIS junction, in which only 5 nm of oxide is inserted between the GST and the electrode, can play the role of selector function. As a result, the device size in the vertical direction can be dramatically reduced, indicating the possibility of realizing high-capacity memory.
|
Free Research Field |
半導体デバイス材料
|
Academic Significance and Societal Importance of the Research Achievements |
現代社会において電子デバイスは最重要インフラとして位置付けられ、デバイス内で情報の記憶を担う不揮発性メモリ(NVM)の高性能化は極めて重要である。GSTを用いたNVMは既存のフラッシュメモリよりも優れた点を有するものの、集積度の観点で劣っている。本研究成果は、GSTのベースNVMのボトルネックが、GSTと電極間に絶縁酸化物を挿入するという至ってシンプルな手段によって解消可能であることを示す成果である。当該成果は、NVMの将来的な高性能化に資するものであり、その社会的意義は高いと判断する。
|