2013 Fiscal Year Final Research Report
Development of an intelligent information processing device and circuit using silicon nanodisk array structures
| Project/Area Number |
22240022
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| Research Category |
Grant-in-Aid for Scientific Research (A)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Sensitivity informatics/Soft computing
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| Research Institution | Kyushu Institute of Technology |
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Principal Investigator |
MORIE Takashi 九州工業大学, 生命体工学研究科(研究院), 教授 (20294530)
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| Co-Investigator(Kenkyū-buntansha) |
SAMUKAWA Seiji 東北大学, 流体科学研究所, 教授 (30323108)
TAKAHASHI Yasuo 北海道大学, 情報科学研究科, 教授 (90374610)
FURUKAWA Tetsuo 九州工業大学, 大学院・生命体工学研究科, 教授 (50219101)
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| Co-Investigator(Renkei-kenkyūsha) |
NAKATA Kazuki 九州工業大学, 大学院・生命体工学研究科, 助教
黄 啓賢 東北大学, 流体科学研究所, 助教
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| Research Collaborator |
ENDO Kazuhiko 産業技術総合研究所, 主任研究員
IGARASHI Makoto 東北大学, 流体科学研究所, 大学院生
LIANG Haichao 九州工業大学, 大学院・生命体工学研究科, 大学院生
SUN Yirai 九州工業大学, 大学院・生命体工学研究科, 大学院生
TOHARA Takashi 九州工業大学, 大学院・生命体工学研究科, 大学院生
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| Project Period (FY) |
2010-04-01 – 2014-03-31
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| Keywords | ナノディスクアレイ構造 / スパイキングニューロン / ＣＭＯＳデバイス / ゆらぎ |
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| Research Abstract |
We have proposed and developed a spiking neuron device that consists of nanodisk array structures and a FinFET device, which is the most advanced CMOS device. The nanodisk array is fabricated using bio-nano-process and neutral beam etching techniques. A neuron part of this device is realized by a FinFET, and a synapse part consists of a nanodisk array. In spiking neuron models, generation of post-synaptic potentials, PSPs, is an essential function. For generating PSPs, we use a delay in electron hopping among nanodisks. Generated PSPs have fluctuation caused by stochastic electron movement, which can be used for neural information processing effectively using noise. We have analyzed electron movement in a nanodisk array by single-electron circuit simulation, and designed the nanostructure including a control electrode. We have also developed an advanced model of the modular-network self-organizing map, SOM, as an information processing model suitable for our nanodevice.
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