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2012 Fiscal Year Final Research Report

Development of high performance large-area X-lay imaging detectors with energy discrimination capabilities

Research Project

  • PDF
Project/Area Number 22240062
Research Category

Grant-in-Aid for Scientific Research (A)

Allocation TypeSingle-year Grants
Section一般
Research Field Medical systems
Research InstitutionNagoya Institute of Technology

Principal Investigator

YASUDA Kazuhito  名古屋工業大学, 工学研究科, 教授 (60182333)

Co-Investigator(Kenkyū-buntansha) NIRAULA Madan  名古屋工業大学, 工学研究科, 准教授 (20345945)
Project Period (FY) 2010 – 2012
Keywords検査 / 診断システム
Research Abstract

Improvement of performance of p-like CdTe/n-CdTe/n+-Si heterojunction diode type radiation detectors has been studied. The diode type detectors were fabricated with CdTe layers grown on Si substrates by metalorganic vapor phase epitaxy. 8x8 2-dimensional imaging detector arrays were also fabricated by integrating the diode type detectors. Energy discriminated X-ray images were obtained with these arrays. 2-dimensional detector arrays with large substrates size of 24.5x24.5 mm2 and high integration density of 20x20 were also realized.

  • Research Products

    (32 results)

All 2013 2012 2011 2010 Other

All Journal Article (10 results) (of which Peer Reviewed: 7 results) Presentation (15 results) Book (1 results) Remarks (4 results) Patent(Industrial Property Rights) (2 results) (of which Overseas: 1 results)

  • [Journal Article] Fabrication of radiation imagingdetector arrays using MOVPE grownthick single crystal CdTe layers on Sisubstrates2012

    • Author(s)
      K.Yasuda, M. Niraula, T. Tachi
    • Journal Title

      Phys. Status. Solidi

      Volume: C9(8-9) Pages: 1848-1851

    • DOI

      DOI:10.1002/pssc.201100517

    • Peer Reviewed
  • [Journal Article] Dark-current characteristics ofradiation detector arrays developedusing MOVPE grown thick CdTe layers onSi substrates2012

    • Author(s)
      K.Yasuda, M. Niraula, N. Fujimura
    • Journal Title

      J. Electron. Mater.

      Volume: 41(10) Pages: 2754-2758

    • DOI

      DOI:10.1007/s11664-012-2121-7

    • Peer Reviewed
  • [Journal Article] 放射線エネルギーを識別可能な画像検出器の開発2012

    • Author(s)
      安田和人、ニラウラマダン
    • Journal Title

      光アライアンス

      Volume: 23(6) Pages: 33-36

  • [Journal Article] Development of Spectroscopic ImagingArrays Using Epitaxially Grown ThickSingle Crystal CdTe Layers on SiSubstrate2012

    • Author(s)
      M.Niraula, K. Yasuda, N. Fujimura
    • Journal Title

      IEEE Trans. Nucl. Sci

      Volume: 59(6) Pages: 3201-3204

    • DOI

      DOI:10.1109/TNS.2012.2215628

    • Peer Reviewed
  • [Journal Article] Fabrication and characterization ofX-ray spectroscopic imaging array basedon thick single crystal CdTe epitaxiallayers2012

    • Author(s)
      M.Niraula, K. Yasuda, S. Namba
    • Journal Title

      IEEE Trans. Electron Devices

      Volume: 59(12) Pages: 3450-3455

    • DOI

      DOI:10.1109/TED.2012.2222413

    • Peer Reviewed
  • [Journal Article] MOVPE法によるSi基板上のCdTe厚膜層を用いた放射線検出アレイの開発2011

    • Author(s)
      舘忠裕、安田和人、ニラウラマダン
    • Journal Title

      電子情報通信学会技報

      Volume: ED2011-26 Pages: 131-134

  • [Journal Article] Development of radiation imagingdevices with energy discriminationcapability using thick CdTe layersgrown on Si substrates by metal organicvapor phase epitaxy2011

    • Author(s)
      K.Yasuda, M. Niraula, Y. Agata
    • Journal Title

      Proc. SPIE

      Volume: 7995 Pages: 79952T-1-79952T-6

    • DOI

      DOI:10.1117/12.888229

    • Peer Reviewed
  • [Journal Article] MOVPE法による大面積CdTeX線・γ線画像検出器に関する研究2010

    • Author(s)
      後藤達彦、安田和人、ニラウラマダン
    • Journal Title

      電子情報通信学会技報

      Volume: ED2010-29 Pages: 65-68

  • [Journal Article] Electricalproperties of halogen-dopedCdTe layers on Si substrates grown bymetalorganic vapor phase epitaxy2010

    • Author(s)
      K.Yasuda, M. Niraula, H. Oka
    • Journal Title

      J.Electron. Mater

      Volume: 39(7) Pages: 1118-1123

    • DOI

      DOI:10.1007/s11664-010-1241-1

    • Peer Reviewed
  • [Journal Article] CdTe厚膜のMOVPE成長と放射線検出器への応用特性2010

    • Author(s)
      安田和人、ニラウラマダン、岡 寛樹
    • Journal Title

      放射線

      Pages: 41-48

    • Peer Reviewed
  • [Presentation] Development oflarge‐area imaging arrays using epitaxTally grown thick single crystalCdTe layers on Si substrates2013

    • Author(s)
      Madan Nirau1,安田和人
    • Organizer
      2013春期第60回応用物理学関係連合講演会
    • Place of Presentation
      神奈川工科大学
    • Year and Date
      2013-03-30
  • [Presentation] MOVPE法による大面積CdTeX線γ線画像検出器に関する研究(XIII)2013

    • Author(s)
      山下隼、ニラウラマダン、安田和人
    • Organizer
      2013春期第60回応用物理学関係連合講演会
    • Place of Presentation
      神奈川工科大学
    • Year and Date
      2013-03-27
  • [Presentation] MOVPE法による大面積CdTeX線γ線画像検出器に関する研究(XIII)-CdTe/Si成長層のアニール処理の検討一2013

    • Author(s)
      和嶋悠人、ニラウラマダン、安田和人
    • Organizer
      2013春期第60回応用物理学関係連合講演会
    • Place of Presentation
      神奈川工科大学
    • Year and Date
      2013-03-27
  • [Presentation] Post -growth annealing of CdTe layers grown on Si substrates by metalorganic vapor phase epitaxy2012

    • Author(s)
      K. Yasuda, M. Niraula, S. Namba
    • Organizer
      2012 US Workshop on the Phys. Chem. II-VI Materials
    • Place of Presentation
      Seattle
    • Year and Date
      20121127-29
  • [Presentation] MOVPE growth of thick single crystal CdZnTe epitaxial layers on Si substrate for Nuclear Radiation Detector development2012

    • Author(s)
      M. Niraula, K. Yasuda, S. Namba
    • Organizer
      19th International Workshop on the Room Temperature Semiconductor Detectors (RTSD)
    • Place of Presentation
      Anaheim CA
    • Year and Date
      20121029-1102
  • [Presentation] CdZnTe層成長と特性評価2012

    • Author(s)
      和嶋悠人、ニラウラマダン、安田和人
    • Organizer
      2012秋期第73回応用物理学会学術講演会
    • Place of Presentation
      愛媛大学
    • Year and Date
      2012-09-14
  • [Presentation] MOVPE法による大面積CdTeX線・γ線画像検出器に関する研究(XI)~検出器アレイの暗電流特性(1)~2012

    • Author(s)
      難波秀平、ニラウラマダン、安田和人
    • Organizer
      2012春期第59回応用物理学関係連合講演会
    • Place of Presentation
      早稲田大学
    • Year and Date
      2012-03-18
  • [Presentation] MOVPE法による大面積CdTeX線・γ線画像検出器に関する研究(XI)~検出器アレイの暗電流特性(II)~2012

    • Author(s)
      館忠裕、ニラウラマダン、安田和人
    • Organizer
      2012春期第59回応用物理学関係連合講演会
    • Place of Presentation
      早稲田大学
    • Year and Date
      2012-03-18
  • [Presentation] MOVPE法によるCdTe/Si厚膜層を用いたエネルギー識別能力をもつX線・γ線画像検出器の開発(H)2012

    • Author(s)
      村松慎也、ニラウラマダン、安田和人
    • Organizer
      2012春期第59回応用物理学関係連合講演会
    • Place of Presentation
      早稲田大学
    • Year and Date
      2012-03-17
  • [Presentation] MOVPE法によるCdTe/Si厚膜層を用いたエネルギー識別能力をもつX線・γ線画像検出器の開発(1)2012

    • Author(s)
      近藤嵩輝、ニラウラマダン、安田和人
    • Organizer
      2012春期第59回応用物理学関係連合講演会
    • Place of Presentation
      早稲田大学
    • Year and Date
      2012-03-17
  • [Presentation] Development of Spectroscopic Imaging Arrays Using Epitaxially Grown Thick Single Crystal CdTe Layers on Si Substrate2011

    • Author(s)
      M. Niraula, K. Yasuda, N. Fu j imura
    • Organizer
      18th International Workshop on the Room Temperature Semiconductor Detectors(RTSD)
    • Place of Presentation
      Valencia, Spain
    • Year and Date
      20111023-29
  • [Presentation] Dark-current characteristics of radiation detector arrays developed using MOVPE grown thick CdTe layers on Si substartes2011

    • Author(s)
      K. Yasuda, M. Niraula
    • Organizer
      2011 US Workshop on the Phys. Chem. II-VI Materials
    • Place of Presentation
      Chicago
    • Year and Date
      20111004-06
  • [Presentation] MOVPE法による大面積CdTeX線・γ線画像検出器に関する研究(IX)2011

    • Author(s)
      藤村直也、ニラウラマダン、安田和人
    • Organizer
      2011春期応用物理学関係連合講演会
    • Place of Presentation
      神奈川工科大学
    • Year and Date
      2011-03-27
  • [Presentation] MOVPE法による大面積CdTeX線・γ線画像検出器に関する研究(X)2011

    • Author(s)
      館忠裕、ニラウラマダン、安田和人
    • Organizer
      2011春期応用物理学関係連合講演会
    • Place of Presentation
      神奈川工科大学
    • Year and Date
      2011-03-27
  • [Presentation] Development of radiation imaging devices with energy discrimination capability using thick CdTe layers grown on Si substrates by metal organic vapor phase epitaxy

    • Author(s)
      K. Yasuda, M. Niraula, Y. Agata
    • Organizer
      7th International Conference on Thin Film Physics and Application
    • Place of Presentation
      Tongji Univ., Shanghai, China
    • Year and Date
      00000924-27
  • [Book] MRS Symp. Proceedings Nuclear Radiation Detection Materials2012

    • Author(s)
      K. Yasuda, A. Burger, M. Fiederle
    • Publisher
      MRS Spring Meeting
  • [Remarks]

    • URL

      http://yasuda.web.nitech.ac.jp/

  • [Remarks] 中日新聞2011年11月4日掲載

  • [Remarks] 日刊工業新聞 2011年11月4日 掲載

  • [Remarks] 科学新聞2011年11月18日掲載

  • [Patent(Industrial Property Rights)] 放射線検出器の製造方法2011

    • Inventor(s)
      安田和人,ニラウラマダン
    • Industrial Property Rights Holder
      名古屋工業大学
    • Industrial Property Number
      特願2011-109374
    • Filing Date
      2011-05-16
  • [Patent(Industrial Property Rights)] Method for manufacturing asemiconductor radiation detector2011

    • Inventor(s)
      安田和人,ニラウラマダン
    • Industrial Property Rights Holder
      中部TLO
    • Industrial Property Number
      1691422
    • Acquisition Date
      2011-07-06
    • Overseas

URL: 

Published: 2014-08-29  

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